IS42S32160F-7BLI-TR

The IS42S32160F-7BLI-TR is a 512 Mbit volatile SDRAM organized as 16M × 32 in a parallel memory interface. It provides synchronous DRAM functionality with specified operating and electrical parameters for designs that require discrete parallel SDRAM memory.

This device targets systems that require a 512 Mbit parallel SDRAM solution with a 90-TFBGA (8×13) package, a clock frequency rated at 143 MHz and a supply voltage range of 3.0 V to 3.6 V.

Key Features

• Memory Type & Organization Volatile SDRAM organized as 16M × 32 delivering 512 Mbit of memory capacity.
• Clock & Access Performance Rated clock frequency of 143 MHz with an access time of 5.4 ns for synchronous data operation.
• Interface Parallel memory interface suitable for systems that use discrete SDRAM devices on a parallel bus.
• Power Supply Operates from 3.0 V to 3.6 V, matching standard 3 V SDRAM system rails.
• Package Supplied in a 90-TFBGA (8×13) package for compact board-level integration.
• Operating Temperature Specified for ambient operation from −40°C to 85°C (TA).
• Manufacturer Manufactured by Integrated Silicon Solution Inc (ISSI).

Typical Applications

• Parallel Memory Subsystems Acts as a 512 Mbit SDRAM device on systems requiring a parallel memory bus and synchronous DRAM operation.
• Embedded Memory Expansion Provides mid-density DRAM capacity (16M × 32) for designs needing additional volatile storage.
• Compact Board Designs The 90-TFBGA (8×13) package enables integration where board space and BGA mounting are required.

Unique Advantages

• 512 Mbit Density: Delivers substantial memory capacity in a single-device 16M × 32 organization.
• Synchronous Performance: 143 MHz clock and 5.4 ns access time provide predictable timing for synchronous parallel memory designs.
• Standard 3 V Supply Range: Operates from 3.0 V to 3.6 V to align with common 3 V SDRAM power rails.
• Wide Ambient Temperature: Rated for −40°C to 85°C ambient operation to support a broad range of thermal environments.
• Compact BGA Packaging: 90-TFBGA (8×13) package offers a space-efficient form factor for high-density board layouts.
• Proven Manufacturer: Supplied by Integrated Silicon Solution Inc (ISSI), a known DRAM device manufacturer.

Why Choose IC DRAM 512MBIT PAR 90TFBGA?

The IS42S32160F-7BLI-TR positions itself as a straightforward 512 Mbit parallel SDRAM option for designs that require synchronous DRAM with defined timing, voltage, and temperature specifications. Its 16M × 32 organization, 143 MHz clock rating and 5.4 ns access time provide clear, verifiable parameters for memory subsystem design.

With a 3.0 V–3.6 V supply range and −40°C to 85°C ambient rating in a 90-TFBGA (8×13) package, this device is suitable for compact board-level implementations where a discrete parallel SDRAM is required. It is manufactured by Integrated Silicon Solution Inc (ISSI), offering a documented feature set for engineering and procurement decisions.

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