IS42S32160F-75ETLI
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 342 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 6 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-75ETLI – IC DRAM 512MBIT PAR 86TSOP II
The IS42S32160F-75ETLI is a 512 Mbit SDRAM device organized as 16M × 32 with a parallel memory interface. It offers defined timing and power characteristics for systems that require on-board parallel DRAM in a compact TSOP II package.
Manufactured by Integrated Silicon Solution Inc. (ISSI), this device is supplied in an 86-TFSOP (86-TSOP II) package and operates over a supply range of 3.0 V to 3.6 V with an ambient temperature range of −40°C to 85°C.
Key Features
- Memory Architecture 512 Mbit SDRAM organized as 16M × 32, providing a single-device high-density parallel memory solution.
- Performance 133 MHz clock frequency and 6 ns access time for clearly defined SDRAM timing characteristics.
- Interface Parallel memory interface for integration into systems that use parallel DRAM signaling.
- Power Supply voltage range of 3.0 V to 3.6 V to match standard 3 V SDRAM power rails.
- Operating Temperature Rated for −40°C to 85°C (TA) to support extended temperature applications.
- Package 86-TFSOP (86-TSOP II) package with 0.400" (10.16 mm) width for compact board-level implementation.
- Memory Type Volatile DRAM memory format suitable for temporary data storage and buffering.
Typical Applications
- Parallel memory expansion Deployment where a 512 Mbit parallel SDRAM device is required for system memory or buffering.
- Board-level DRAM integration Integration on PCBs that require a TSOP II footprint and a 3.0–3.6 V supply.
- Temperature-sensitive deployments Use in systems that must operate reliably across −40°C to 85°C ambient conditions.
Unique Advantages
- High-density SDRAM: 512 Mbit (16M × 32) capacity provides substantial on-board memory for buffering and temporary storage.
- Specified timing: 133 MHz clock and 6 ns access time provide concrete performance parameters for design validation.
- Flexible power range: 3.0–3.6 V supply range accommodates common 3 V SDRAM power rails.
- Wide operating temperature: −40°C to 85°C rating supports deployments across extended temperature ranges.
- Compact package: 86-TFSOP (86-TSOP II) 0.400" (10.16 mm) width simplifies placement in space-constrained layouts.
Why Choose IS42S32160F-75ETLI?
The IS42S32160F-75ETLI delivers a clear combination of capacity, defined timing, and package density for designs that require parallel SDRAM in a compact form factor. Its 16M × 32 organization, 133 MHz clocking, and 6 ns access time offer verifiable performance parameters for system integration.
This device is suitable for engineers and procurement teams specifying a 512 Mbit SDRAM solution with a TSOP II footprint and extended ambient temperature capability, where predictable electrical and mechanical characteristics are required.
Request a quote or submit an inquiry to obtain pricing and availability information for IS42S32160F-75ETLI.
