IS42S32160D-7BL

The IS42S32160D-7BL is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with internal bank architecture and pipeline operation. It provides a parallel memory interface with LVTTL signaling and is optimized for systems requiring synchronous, clock-referenced DRAM.

Designed for commercial-temperature environments, this device targets applications that need programmable burst operation, on-chip refresh management and predictable latency at a 143 MHz clock rate (–7 timing grade).

Key Features

• Memory Core  512 Mbit SDRAM organized as 16M × 32 with 4 internal banks for hidden row access and precharge.
• Performance  Clock frequency up to 143 MHz for the –7 grade and access time from clock as low as 5.4 ns (CAS latency options 2 and 3).
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh and Power Management  Supports Auto Refresh (CBR) and Self Refresh with 8K refresh cycles every 64 ms (standard refresh modes supported).
• Interface and Signaling  Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL interface levels.
• Power  Voltage supply specified as 3.0 V to 3.6 V (product specification).
• Package  90-ball thin fine-pitch BGA (90-TFBGA, 8 × 13) in x32 configuration.
• Temperature Range  Commercial operating temperature 0°C to +70°C (TA).

Typical Applications

• Parallel SDRAM system memory  Use as 512 Mbit synchronous DRAM in systems that require a parallel memory interface and predictable CAS timings.
• High-speed buffering  Burst read/write capability and internal bank architecture enable efficient burst transfers for data buffering needs.
• Embedded platforms (commercial)  Suited for commercial-temperature embedded designs requiring a 16M × 32 memory organization and 90-TFBGA packaging.

Unique Advantages

• Predictable timing behavior  Specified access times (5.4 ns) and selectable CAS latencies provide deterministic performance for timing-sensitive designs.
• Flexible burst operations  Programmable burst length and sequence options simplify memory access patterns and can improve throughput in burst-oriented workloads.
• On-chip refresh management  Auto Refresh and Self Refresh support with standard 8K/64 ms refresh cycles reduce external refresh control complexity.
• Compact, industry-standard package  90-TFBGA (8×13) ball array allows high-density board integration for x32 memory configurations.
• Commercial temperature rating  Specified 0°C to +70°C operating range aligns with a wide set of commercial applications.

Why Choose IS42S32160D-7BL?

The IS42S32160D-7BL provides a synchronous, parallel 512 Mbit DRAM solution with pipeline architecture, programmable burst modes and selectable CAS latencies—delivering predictable, high-speed memory access at the –7 timing grade (143 MHz). Its 16M × 32 organization, internal banking and on-chip refresh features make it well suited for commercial embedded systems and designs that require deterministic SDRAM behavior and compact BGA packaging.

This device is appropriate for engineers and procurement teams seeking a documented, specification-driven SDRAM component with clear timing, power and thermal characteristics for commercial-temperature designs.

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