IS42S32160D-6BLI

The IS42S32160D-6BLI is a 512 Mbit synchronous DRAM organized as 16M × 32 with a parallel memory interface and a 90-ball TF-BGA (8×13) package. It implements a pipeline architecture with fully synchronous operation referenced to the rising edge of the clock to support high-speed data transfer in systems requiring volatile SDRAM storage.

This device targets designs that require a 512 Mbit parallel SDRAM solution with programmable burst control, refresh management and industrial temperature capability. Key value propositions include deterministic synchronous timing, on-chip refresh/self-refresh support, and a compact TF‑BGA footprint.

Key Features

• Core architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs referenced to the rising clock edge for predictable timing.
• Memory organization  512 Mbit capacity configured as 16M × 32 (4 banks), providing parallel 32-bit data width.
• Performance & timing  Rated clock frequency 166 MHz with access time as low as 5.4 ns and programmable CAS latency (2 or 3 clocks), enabling fast burst and random column access.
• Burst control & sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) for flexible data transfers.
• Refresh & power management  Supports Auto Refresh and Self Refresh with 8K refresh cycles per 64 ms, reducing external refresh management overhead.
• Interface  Parallel memory interface with LVTTL-compatible signaling for command and address inputs (as specified in the device family features).
• Power  Supply voltage range 3.0 V to 3.6 V as specified for this device variant.
• Package & thermal  90-ball TF‑BGA (8×13) package; specified operating ambient temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems  Parallel SDRAM storage for board-level memory expansion where a 512 Mbit, 32-bit data path is required.
• Industrial control equipment  Systems operating across −40 °C to +85 °C that require synchronous DRAM with on-chip refresh and self-refresh capability.
• High-bandwidth data buffering  Applications needing programmable burst lengths and 166 MHz clocking for burst read/write operations and random column access.
• Designs requiring compact BGA packaging  Use where a 90-ball TF‑BGA (8×13) package footprint is required for dense board layouts.

Unique Advantages

• Deterministic synchronous timing: Programmable CAS latency and fully synchronous operation deliver predictable timing for clocked memory systems.
• Flexible burst and sequencing: Programmable burst lengths and sequential/interleave modes simplify data-transfer optimization for different access patterns.
• Integrated refresh management: Auto Refresh and Self Refresh reduce external refresh controller complexity and maintain data integrity during low-power intervals.
• Industrial temperature range: Specified operation from −40 °C to +85 °C supports deployment in temperature-challenging environments.
• Compact TF‑BGA package: 90-ball TF‑BGA (8×13) package enables space-efficient board designs with a 32-bit parallel data path.
• Voltage flexibility: Operates across a 3.0 V to 3.6 V supply range to match system power domains.

Why Choose IC DRAM 512MBIT PAR 90TFBGA?

The IS42S32160D-6BLI provides a 512 Mbit, 16M × 32 parallel SDRAM solution with synchronous, pipeline architecture and programmable timing that suits designs demanding deterministic clocked memory behavior. Its combination of 166 MHz operation, 5.4 ns access timing, and burst programmability makes it appropriate for systems that need efficient, high-speed burst transfers and predictable latency.

This device is well suited to engineers specifying board-level SDRAM in compact BGA form factors and to applications that require on-chip refresh/self-refresh and operation across an industrial temperature range. The IS42S32160D-6BLI delivers a verifiable set of features for scalable, robust memory subsystem integration.

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