IS42S32160D-6BLI-TR

The IS42S32160D-6BLI-TR is a 512 Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc (ISSI), organized as 16M × 32 with internal bank architecture. It implements a fully synchronous, pipeline architecture with all signals referenced to the rising edge of the clock, providing predictable timing for parallel memory systems.

This device targets systems requiring parallel SDRAM with configurable burst operation and standard LVTTL signaling. Key capabilities include a 166 MHz clock option, programmable burst lengths and sequences, and built-in refresh/self-refresh support for continuous operation across the specified temperature and voltage ranges.

Key Features

• Core / Architecture Fully synchronous SDRAM with internal bank structure for hiding row access/precharge; all inputs and outputs referenced to positive clock edge.
• Memory Organization 16M × 32 organization delivering 512 Mbit capacity with 4 internal banks.
• Performance 166 MHz clock-frequency option (device -6 speed grade) with access time from clock as low as 5.4 ns (CAS latency = 3).
• Timing & Burst Control Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh & Power Management Auto Refresh (CBR), Self Refresh, and 8K refresh cycles every 64 ms to maintain data integrity.
• Interface Parallel memory interface with LVTTL signaling and support for random column address every clock cycle; burst read/write and burst read/single write operations supported.
• Supply & Operating Range VDD / VDDQ = 3.0 V – 3.6 V supply range and industrial operating temperature of −40°C to +85°C (TA).
• Package 90-ball Thin Fine‑pitch BGA (90‑TFBGA, 8 × 13) package for compact board-level integration.

Unique Advantages

• Deterministic high-speed access: The 166 MHz clock option with 5.4 ns access time (CAS latency = 3) supports time-critical parallel memory operations.
• Flexible burst behavior: Programmable burst lengths and sequence modes enable tuning for sequential or random access patterns to match system throughput needs.
• Robust refresh and low-activity retention: Auto and self-refresh modes plus the 8K/64 ms refresh scheme maintain data integrity across operating conditions.
• Industry temperature support: Rated for −40°C to +85°C, suitable for industrial-temperature applications within the specified range.
• Standard parallel interface: LVTTL-compatible parallel signaling and support for burst read/write operations ease integration into existing parallel-memory designs.
• Compact BGA footprint: 90‑TFBGA (8×13) package reduces board area while providing the connectivity required for 32-bit wide devices.

Why Choose IC DRAM 512MBIT PAR 90TFBGA?

The IS42S32160D-6BLI-TR offers a balanced combination of synchronous pipeline architecture, configurable burst operation, and industrial temperature operation in a compact 90‑TFBGA package. Its 16M × 32 organization and parallel LVTTL interface make it suitable for systems that require predictable, high-rate parallel memory access with flexible burst and refresh control.

This device is well suited to designs that need a 512 Mbit SDRAM solution with explicit timing parameters, programmable burst options, and integrated refresh mechanisms, delivering a verifiable specification set for engineering and procurement decisions.

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