IS42S32160D-6BL

The IS42S32160D-6BL is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with internal bank architecture and pipeline operation. It provides a parallel LVTTL interface and fully synchronous signaling referenced to the rising edge of the clock.

Targeted at designs that require documented, high-speed parallel memory, this device delivers 166 MHz operation with a 5.4 ns access time (specified for this speed grade), programmable burst behavior, standard refresh modes and a compact 90‑TFBGA (8×13) package. Operating supply is 3.0 V to 3.6 V with a commercial temperature range of 0 °C to +70 °C.

Key Features

• Core & architecture  Fully synchronous SDRAM with pipeline architecture; all I/O and control signals are referenced to the rising clock edge and internal banks hide row access/precharge latency.
• Memory organization  512 Mbit capacity organized as 16M × 32, implemented with multiple internal banks for parallel access.
• Performance & timing  Device -6 speed grade operates at 166 MHz with an access time of 5.4 ns; programmable CAS latency options support CL = 2 or 3 per device specification.
• Burst and access modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and retention  Supports Auto Refresh (CBR) and Self Refresh; specified for 8K refresh cycles every 64 ms.
• Interface and power  Parallel LVTTL interface with supply voltage range of 3.0 V to 3.6 V as specified for this part number.
• Package and temperature  90‑TFBGA (8×13) supplier device package; commercial operating temperature from 0 °C to +70 °C.

Typical Applications

• System memory for parallel SDRAM designs  Used where a 512 Mbit synchronous, parallel memory is required and deterministic timing is needed.
• Board-level high-density memory  90‑TFBGA package enables compact surface-mount integration for space-constrained assemblies.
• Designs requiring programmable burst control  Programmable burst lengths and sequences support varied transfer patterns and controller requirements.
• Applications needing managed refresh  Auto and Self Refresh support with 8K/64 ms refresh cycles provide standardized refresh behavior for system designers.

Unique Advantages

• Synchronous pipeline architecture: Provides consistent, clock-referenced operation and internal bank management to hide row precharge and access latency.
• Flexible burst and latency settings: Programmable burst lengths and CAS latency options allow tuning for different controller and system throughput needs.
• Defined high-speed timing: The -6 speed grade specifies 166 MHz operation and 5.4 ns access time for predictable performance integration.
• Compact TF‑BGA footprint: 90‑ball (8×13) TF‑BGA package minimizes board area while delivering x32 data width.
• Standard refresh management: Auto Refresh and Self Refresh modes with 8K refresh cycles per 64 ms simplify retention and power management strategies.
• Commercial temperature and standard supply range: 0 °C to +70 °C operating range with 3.0 V–3.6 V supply for standard commercial applications.

Why Choose IC DRAM 512MBIT PAR 90TFBGA?

The IS42S32160D-6BL combines a 512 Mbit x32 memory organization with a fully synchronous, pipelined SDRAM architecture to deliver predictable high-speed parallel memory. With a defined 166 MHz operating point, 5.4 ns access time, programmable burst modes and standard refresh mechanisms, the device is suited to designs that require well-documented timing, flexible transfer modes and a compact TF‑BGA package.

This part is appropriate for projects that need a standardized parallel LVTTL SDRAM solution with commercial-temperature operation and a 3.0 V–3.6 V supply. Its documented timing parameters, refresh behavior and packaging help simplify system integration and board-level memory implementations.

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