IS42S32160C-75BLI

The IS42S32160C-75BLI is a 512Mbit synchronous DRAM device from Integrated Silicon Solution Inc. It is internally organized as 16M × 32 and configured as quad 4M × 32 banks with a fully synchronous, pipelined architecture and parallel memory interface.

Designed for systems requiring high-speed synchronous DRAM, this device offers up to 133 MHz clock operation, selectable CAS latency, programmable burst modes, and byte-level data masking, delivering deterministic timing and flexible data transfer options for embedded and system-level memory subsystems.

Key Features

• Memory Core 512 Mbit SDRAM organized as 16M × 32 and internally configured as quad 4M × 32 banks with 8192 rows × 512 columns per 4M × 32 bank.
• Performance Supports a 133 MHz clock frequency (part -75), CAS latency options of 2 or 3 and access time down to 6 ns, enabling pipelined, synchronous data transfers.
• Burst and Latency Control Programmable burst lengths of 1, 2, 4, 8 or full page and selectable burst type (interleaved or linear) for flexible read/write sequencing.
• Interface & Control LVTTL-compatible interface with all inputs and outputs registered on the rising edge of CLK, individual byte control via DQM0–DQM3, and bank addressing (BA0, BA1).
• Refresh and Power Modes Supports Auto Refresh and Self Refresh with a refresh count of 8192/64 ms; CKE controls entry to Power Down and Self Refresh modes.
• Voltage and Timing Operates from 3.0 V to 3.6 V (VDD/VDDQ +3.3 V ±0.3 V) with key timing parameters provided for CL = 2 and CL = 3.
• Package & Temperature Available in a 90-ball BGA (8 × 13 mm) package and specified for an operating temperature range of −40 °C to 85 °C.

Typical Applications

• System Memory Subsystems Use as a parallel SDRAM device where deterministic synchronous transfers and programmable burst modes are required.
• Embedded Platforms Suitable for embedded systems that require a 512 Mbit parallel SDRAM with byte masking and self-refresh capability for low-power idle states.
• Memory Expansion in Board-Level Designs Intended for board-level memory expansion where a 90-ball BGA footprint and a 3.3 V supply are compatible with system design constraints.

Unique Advantages

• Deterministic Synchronous Operation: Fully synchronous design with pipelined architecture ensures all signals are registered on CLK for predictable timing.
• Flexible Performance Modes: Selectable CAS latency (2 or 3) and multiple burst length/type options let designers tune throughput and latency to system needs.
• Byte-Level Control: Individual byte control via DQM0–DQM3 provides fine-grained data masking for partial-word transfers and error management strategies.
• Robust Refresh Support: Auto Refresh and Self Refresh with a standard 8192 refresh cycle per 64 ms maintain data integrity across operational modes.
• Wide Operating Range: Operation from 3.0 V to 3.6 V and −40 °C to 85 °C supports a broad set of commercial and industrial temperature environments.

Why Choose IS42S32160C-75BLI?

The IS42S32160C-75BLI positions itself as a reliable 512 Mbit parallel SDRAM for designs that require synchronous, pipelined memory with programmable latency and burst control. Its byte-level masking, refresh capabilities, and LVTTL interface make it suitable for system-level memory implementations where controlled timing and flexible data transfer patterns are important.

This device is appropriate for engineers and procurement teams targeting board-level memory expansion or embedded systems that need a 90-ball BGA 512 Mbit SDRAM operating at 3.3 V with an extended commercial/industrial temperature range.

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