IS42S32160C-75BL

The IS42S32160C-75BL is a 512 Mbit synchronous DRAM device configured as 16M × 32 (quad 4M × 32 banks) in a 90-ball BGA package. It implements a fully synchronous, pipelined architecture with registered inputs and outputs on the rising edge of CLK for predictable timing and high-speed data transfer.

Designed for applications that require parallel SDRAM memory, the device offers programmable operating modes, selectable CAS latency, and on-chip refresh control while operating from a 3.3 V ±0.3 V supply over a commercial temperature range.

Key Features

• Memory Organization  512 Mbit SDRAM configured as 16M × 32 (stacked internally as two 16M × 16 devices) with four 4M × 32 banks; each bank organized as 8192 rows × 512 columns × 32 bits.
• Synchronous Pipelined Architecture  Fully synchronous operation with all signals registered on CLK; internal pipelined architecture supports high-speed transfers.
• Performance Options  Clock frequency options include 166 MHz and 133 MHz; CAS latency selectable as 2 or 3 and access time around 6 ns (device-specific timing shown in datasheet).
• Burst and Access Modes  Programmable burst lengths of 1, 2, 4, 8 or full page with interleaved or linear burst types for flexible data access patterns.
• Interface and Control  LVTTL-compatible interface; inputs and outputs sampled on rising CLK edge; supports individual byte control via DQM0–3.
• Power and Refresh  Power supply VDD/VDDQ = +3.3 V ±0.3 V (3.0–3.6 V); includes Auto Refresh and Self Refresh modes to maintain data integrity and manage standby power.
• Package and Temperature  Supplied in a 90-ball BGA (8 × 13 mm) package; commercial operating temperature range 0 °C to 70 °C.

Unique Advantages

• High-density memory in a compact package: 512 Mbit capacity in a 90-ball BGA (8 × 13 mm) enables board area savings while providing substantial DRAM capacity.
• Flexible performance tuning: Selectable CAS latency (2 or 3) and multiple burst lengths allow designers to match performance to system timing requirements.
• Byte-level data control: Individual byte masking via DQM0–3 provides fine-grained control for partial-word transfers and memory management.
• Synchronous, pipelined design: Registered inputs/outputs and internal pipelining produce deterministic timing for parallel SDRAM interfaces.
• On-chip refresh and low-power states: Auto Refresh and Self Refresh support maintains data retention while enabling lower standby power during idle periods.
• Standard voltage and interface compatibility: Operates from a 3.3 V ±0.3 V supply and uses an LVTTL interface for straightforward integration with common system logic levels.

Why Choose IS42S32160C-75BL?

The IS42S32160C-75BL positions itself as a high-density, configurable parallel SDRAM solution offering programmable latency and burst modes, synchronous pipelined operation, and on-chip refresh capabilities. Its 16M × 32 organization and four-bank architecture deliver the capacity and memory organization needed for systems requiring parallel SDRAM.

This device is suitable for designs that require a compact BGA footprint with a standard 3.3 V supply and LVTTL interface, combined with flexible timing and data masking features for efficient memory subsystem implementation. The inclusion of Auto and Self Refresh modes supports stable operation across typical commercial temperature ranges.

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