IS42S32160C-6BL-TR

The IS42S32160C-6BL-TR is a 512 Mbit synchronous DRAM (SDRAM) configured as a quad 4M × 32 device with a fully synchronous, pipelined architecture. All inputs and outputs are registered on the rising edge of the system clock (CLK) to support high-speed parallel data transfers.

Designed for systems requiring parallel SDRAM memory, the device operates from a 3.3 V supply (VDD/VDDQ = 3.3 V ±0.3 V), supports CAS latencies of 2 or 3, and offers flexible burst and refresh control for use in commercial and industrial applications.

Key Features

• Memory Core & Organization  512 Mbit SDRAM organized as 16M × 32 (quad 4M × 32 banks), internally stacked from two 256 Mbit 16M × 16 devices.
• Performance & Timing  Supports clock frequencies up to 166 MHz (CAS latency 3) and 133 MHz (CAS latency 3 alternative); access time down to 5.4 ns (CAS = 3).
• Flexible Read/Write Modes  Programmable CAS latency (2 or 3), selectable burst lengths (1, 2, 4, 8 or full page) and burst type (interleaved or linear) for adaptable data sequencing.
• Power & Interface  Power supply VDD/VDDQ = 3.3 V ±0.3 V with LVTTL-compatible interface signals; individual byte masking via DQM0–DQM3.
• Refresh & Low-Power Options  Auto Refresh and Self Refresh supported; device implements standard SDRAM refresh (8192 cycles/64 ms).
• Package & Temperature  90-ball WBGA package (8 × 13 mm), supplier package listed as 90-WBGA (8×13); operating temperature shown as 0°C to 70°C (TA) with commercial and industrial temperature options noted.
• Parallel SDRAM Interface  Fully synchronous parallel interface with CLK, CKE and standard SDRAM control pins; all signals sampled on the rising edge of CLK.

Typical Applications

• Embedded memory subsystems  Use where a 512 Mbit parallel SDRAM with 16M × 32 organization is required for high-throughput data buffering.
• Industrial equipment  Suitable for systems that rely on commercial and available industrial temperature ranges and require a 3.3 V LVTTL memory interface.
• Systems requiring flexible burst and latency control  Designs that need programmable CAS latency and selectable burst lengths for varied throughput and access patterns.

Unique Advantages

• Quad-bank 4M × 32 configuration: Internally organized as four 4M × 32 banks to simplify memory mapping and bank-level operations.
• Synchronous pipelined architecture: All I/O registered to CLK and an internal pipeline support deterministic, synchronous data transfers at specified clock rates.
• Timing flexibility: Programmable CAS latency (2 or 3) and multiple burst length/type options allow tuning for performance or access efficiency.
• Standard 3.3 V LVTTL signaling: Operates from VDD/VDDQ = 3.3 V ±0.3 V and uses LVTTL-compatible I/O for straightforward integration with 3.3 V system logic.
• Compact BGA package: 90-ball WBGA (8 × 13 mm) provides a small footprint for space-constrained board designs.

Why Choose IS42S32160C-6BL-TR?

The IS42S32160C-6BL-TR delivers a 512 Mbit parallel SDRAM solution with a fully synchronous, pipelined architecture and configurable timing modes (CAS = 2 or 3). Its quad 4M × 32 organization, flexible burst control and LVTTL interface make it appropriate for systems that require predictable, high-speed parallel memory with a 3.3 V supply.

This device is suited to designers targeting commercial and industrial temperature ranges and compact board layouts thanks to the 90-ball WBGA (8 × 13 mm) package. The combination of configurable timing, standard signaling and refresh options supports scalable integration into a variety of parallel-memory subsystems.

If you need pricing or availability details, request a quote or submit an inquiry to our sales team for further assistance and lead-time information.