IS42S32160C-6BI

The IS42S32160C-6BI is a 512Mbit synchronous DRAM organized as 16M × 32, implemented in a pipelined, fully synchronous architecture. It provides a parallel memory interface with selectable CAS latency and programmable burst operations, suited for systems that require high-speed, byte-controlled DRAM.

Key attributes include support for 166/133 MHz clock operation, a +3.3V ±0.3V power supply range, individual byte control via DQM0–3, and power management modes such as Auto Refresh and Self Refresh.

Key Features

• Core / Architecture  Fully synchronous operation with an internal pipelined architecture; all inputs and outputs are registered on the rising edge of CLK for deterministic timing.
• Memory Organization  512 Mbit total capacity organized as 16M × 32 (quad 4M × 32 banks), internally stacking two 256M (16M × 16) devices; each 4M × 32 bank is organized as 8192 rows × 512 columns × 32 bits.
• Performance / Timing  Supports CLK frequencies up to 166 MHz (CAS latency = 3) and 133/100 MHz options; access times down to 5.4 ns (from clock) for CAS latency = 3 on the -6 grade.
• Burst and Mode Control  Programmable Mode with selectable CAS latency (2 or 3) and burst lengths of 1, 2, 4, 8 or full page; burst type can be interleaved or linear.
• Interface / Control  Parallel memory interface with LVTTL signaling and individual byte masking via DQM0–3 for fine-grained data control.
• Refresh and Power Management  Auto Refresh and Self Refresh supported; refresh count specified as 8192 cycles per 64 ms to maintain data integrity.
• Power / Voltage  VDD/VDDQ supply: +3.3 V ±0.3 V (3.0 V to 3.6 V operational range).
• Package and Temperature  Available in a 90-ball WBGA (8 × 13 mm) package (90-LFBGA); operating temperature range of –40°C to 85°C (TA). Lead-free package option is available.

Typical Applications

• Embedded memory subsystems  For designs that require a 512 Mbit SDRAM with parallel LVTTL interface and byte-level data control.
• High‑speed buffer memory  Use where pipelined synchronous access and selectable CAS latency support performance-sensitive buffering tasks.
• System memory expansion  Integration into systems needing a compact 90-WBGA memory package with industrial temperature range and refresh management.

Unique Advantages

• Flexible timing modes: CAS latency selectable between 2 and 3 with multiple clock-frequency options to match system timing and performance requirements.
• Fine-grain data control: Individual byte control via DQM0–3 enables selective masking and precise data handling per byte lane.
• Deterministic synchronous operation: All I/O registered on CLK and an internal pipelined architecture provide predictable timing for system designers.
• Robust refresh support: Built-in Auto Refresh and Self Refresh with specified 8192/64 ms refresh count simplifies memory integrity management.
• Compact, industry-grade packaging: 90-ball WBGA (8 × 13 mm) package with lead-free option and −40°C to 85°C operating range for space-constrained, industrial designs.

Why Choose IS42S32160C-6BI?

The IS42S32160C-6BI delivers a straightforward, high-density 512 Mbit SDRAM solution with selectable timing, burst control and byte-level masking, suitable for designs that require predictable synchronous performance and compact packaging. Its pipelined architecture, LVTTL interface and supported power-management modes make it a practical choice for embedded memory subsystems and high-speed buffering applications.

With industrial temperature support, a 3.3 V power domain and an available lead-free package, this device addresses durability and integration needs for long-term designs while offering the memory organization and refresh behavior necessary for reliable operation.

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