IS42S32160B-7TLI

The IS42S32160B-7TLI is a 512Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with internal quad-bank architecture. It uses a fully synchronous, pipelined design with all signals referenced to the rising edge of the clock.

This device targets memory subsystems requiring a parallel SDRAM interface with programmable burst control, selectable CAS latency, and support for auto‑refresh and self‑refresh for dynamic memory management.

Key Features

• Core / Memory Architecture  512Mbit SDRAM organized as 4M × 32 × 4 banks (16M × 32 overall) to support bank interleaving and high-throughput burst operations.
• Performance  Rated for a 143 MHz clock (–7 speed grade) with an access time of 5.4 ns (CAS latency = 3). Programmable CAS latency of 2 or 3 clocks provides timing flexibility.
• Burst and Access Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) enable flexible data transfer modes and burst termination with autoprecharge.
• Refresh and Power Management  Supports Auto Refresh (CBR) and Self Refresh; refresh cycle options include 8192 cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) as specified.
• Interface and Logic Levels  LVTTL-compatible inputs/outputs and a parallel memory interface suitable for synchronous memory systems.
• Power  Single power supply operation at 3.3 V (3.0–3.6 V supply range as specified), simplifying power rail requirements.
• Package and Temperature  Available in an 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) package with an operating temperature range of −40 °C to +85 °C (TA) for industrial applications.

Unique Advantages

• High-speed synchronous operation: 143 MHz clock support with 5.4 ns access time (CL=3) enables fast, predictable read/write timing for synchronous memory systems.
• Flexible burst control: Programmable burst lengths and sequence modes allow tuning of memory transfers to match system traffic patterns.
• Banked architecture for throughput: Quad-bank organization permits internal bank interleaving to hide precharge and improve effective bandwidth.
• Robust refresh options: Auto and self-refresh modes with defined refresh cycle configurations support power-saving and reliability requirements.
• Industry-standard package: 86-TSOP II footprint (10.16 mm width) supports common board-level assembly and form-factor requirements.
• Single-supply simplicity: 3.3 V single-supply operation (3.0–3.6 V range) reduces power-rail complexity.

Why Choose IS42S32160B-7TLI?

The IS42S32160B-7TLI provides a compact 512Mbit SDRAM solution with synchronous, pipelined operation and programmable timing/burst features suited to systems that require predictable, high-speed parallel memory access. Its quad-bank architecture and selectable CAS latency deliver design flexibility for optimizing throughput and latency trade-offs.

With a single 3.3 V supply, LVTTL-compatible interface, industrial operating temperature range (−40 °C to +85 °C), and an industry-standard 86-TSOP II package, this device is positioned for applications that need a reliable, high-performance DRAM component with configurable refresh and burst behavior.

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