IS42S32160C-6BI-TR

The IS42S32160C-6BI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with a parallel memory interface and a 90-ball WBGA (8×13 mm) package. It implements a fully synchronous, pipelined architecture with programmable modes, supporting CAS latency options and multiple burst lengths for flexible data transfer.

This device targets systems requiring high-speed parallel SDRAM memory with features such as auto-refresh/self-refresh, individual byte masking, and LVTTL signaling, and operates over a wide supply and temperature range for varied system environments.

Key Features

• Memory Architecture  The device is a 512 Mbit SDRAM internally configured as a quad 4M × 32 DRAM (stacking two 256Mb 16M×16 devices) with 4 banks organized as 8192 rows × 512 columns × 32 bits.
• Performance  Supports clock frequencies up to 166 MHz (CAS latency = 3) and 133 MHz (CAS latency = 3 option), with documented access times down to 5.4 ns and CAS latency options of 2 or 3.
• Burst and Mode Flexibility  Programmable burst lengths of 1, 2, 4, 8, or full-page and selectable burst type (interleaved or linear) to match system throughput and access patterns.
• Interface and Control  Fully synchronous operation with LVTTL interface; all inputs and outputs are registered on the rising edge of CLK. Supports bank addressing (BA0, BA1) and autoprecharge signaling.
• Data Masking  Individual byte control via DQM0–DQM3 for selective masking of data bytes during read/write operations.
• Power and Refresh  VDD/VDDQ supply of +3.3V ±0.3V, with Auto Refresh and Self Refresh support and an 8192-refresh-count per 64 ms requirement.
• Package and Temperature  90-ball WBGA (8×13 mm) package; specified operating ambient temperature range of -40°C to +85°C.

Typical Applications

• High-speed memory buffers  Used where a 512 Mbit parallel SDRAM is required for temporary data storage and burst transfers.
• System memory expansion  Applicable for designs needing organized 16M × 32 memory banks with selectable CAS latency and burst modes to tune performance.
• Data streaming and buffering  Suitable for applications that leverage pipelined synchronous transfers and programmable burst lengths for efficient throughput.

Unique Advantages

• Flexible timing options: CAS latency selectable between 2 and 3 and multiple burst lengths allow designers to balance latency and throughput to match system requirements.
• High-frequency operation: Rated for up to 166 MHz clock operation (CAS latency = 3), enabling low access times (as low as 5.4 ns) for demanding memory access patterns.
• Byte-level control: DQM0–DQM3 individual byte masking simplifies partial-word writes and read masking without external logic.
• Compact WBGA package: 90-ball (8×13 mm) WBGA offers a small footprint for space-constrained boards while providing required I/O density for a 32-bit wide interface.
• Robust operating range: Supports VDD/VDDQ +3.3V ±0.3V and an ambient temperature range of -40°C to +85°C for varied deployment environments.
• Integrated refresh management: Auto Refresh and Self Refresh reduce host controller overhead for maintaining data integrity.

Why Choose IC DRAM 512MBIT PARALLEL 90WBGA?

The IS42S32160C-6BI-TR is positioned for designs that require a 512 Mbit synchronous, parallel DRAM with configurable timing, byte-level masking, and burst transfer flexibility. Its pipelined architecture and support for up to 166 MHz operation provide low access times and predictable synchronous behavior for system memory buffering and high-throughput data paths.

This device suits engineers seeking a compact WBGA-packaged SDRAM with standard 3.3V supply compatibility, integrated refresh modes, and documented timing options—offering predictable performance and straightforward integration into parallel SDRAM memory subsystems.

Request a quote or submit an inquiry for pricing and availability to get detailed procurement information and lead-time estimates for the IS42S32160C-6BI-TR.