IS42S32160C-6BLI

The IS42S32160C-6BLI is a 512Mbit synchronous DRAM (SDRAM) organized as 16M × 32 and internally configured as a quad 4M × 32 device. It uses a pipelined, fully synchronous architecture with registered inputs and outputs on the rising edge of CLK to support high-speed data transfer.

Supplied in a 90-ball WBGA (8 × 13 mm) package and specified for VDD/VDDQ = 3.3V ± 0.3V, the device supports flexible timing modes and memory management features such as auto-refresh and self-refresh for system memory applications requiring programmable CAS latency and burst control.

Key Features

• Memory Architecture  512 Mbit SDRAM configured as 16M × 32, internally arranged as four 4M × 32 banks for parallel access and organization.
• Performance  Fully synchronous, pipelined design with supported clock frequencies up to 166 MHz (CAS latency = 3) and access times as low as 5.4 ns (CAS latency = 3).
• Programmable Timing & Burst  CAS latency selectable at 2 or 3, with burst lengths of 1, 2, 4, 8 or full page and burst types selectable as interleaved or linear.
• Refresh & Power Management  Auto Refresh and Self Refresh supported with a refresh count of 8192 per 64 ms; Power Down and Self Refresh modes suspend internal clocking to reduce standby power.
• Byte Masking & Interface  Individual byte control via DQM0–DQM3 and LVTTL-compatible interface for data masking and signaling.
• Supply & Voltage  VDD/VDDQ supply range of 3.3V ± 0.3V (3.0V–3.6V) consistent with standard 3.3V SDRAM systems.
• Package & Temperature  90-ball WBGA (8 × 13 mm) package with commercial and industrial temperature options; operating temperature range specified at −40°C to 85°C.

Unique Advantages

• High-speed pipelined data transfer: The fully synchronous, internally pipelined architecture enables deterministic timing and high-throughput memory access.
• Flexible timing and burst control: Programmable CAS latency (2 or 3) and multiple burst length/type options allow tuning for varied access patterns.
• Fine-grain data masking: Individual byte control through DQM0–DQM3 simplifies partial-word writes and data management.
• Robust refresh and low-power modes: Auto Refresh and Self Refresh plus Power Down mode provide controlled refresh management and reduced standby power.
• Compact WBGA package: 90-ball WBGA (8 × 13 mm) packaging provides a space-efficient footprint for board-level integration.
• Wide operating range: Specified VDD/VDDQ 3.0–3.6V and −40°C to 85°C operation support a range of system environments.

Why Choose IC DRAM 512MBIT PARALLEL 90WBGA?

The IS42S32160C-6BLI delivers a 512Mbit synchronous DRAM solution with configurable timing, burst options, and byte-level control, packaged in a compact 90-ball WBGA. Its pipelined synchronous architecture and supported refresh/power modes make it suitable for designs that require deterministic, high-speed parallel memory access and controlled standby behavior.

This device fits designs needing selectable CAS latency, versatile burst operation, and standard 3.3V supply compatibility, while offering industrial temperature range and lead-free package options where specified in the product documentation.

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