IS42S32160C-75BL-TR

The IS42S32160C-75BL-TR is a 512 Mbit synchronous DRAM (SDRAM) device configured as a quad 4M × 32 organization. The device uses an internal pipelined architecture with a fully synchronous interface to support registered input/output timing on the rising edge of CLK.

Designed for systems requiring parallel SDRAM memory, the device offers selectable CAS latency, programmable burst length and type, and integrated refresh modes, providing flexible memory timing and control for embedded and system designs.

Key Features

• Memory Technology: SDRAM volatile memory organized as 16M × 32 yielding 512 Mbit total capacity; internally stacked from two 16Mx16 devices.
• Organization & Banks: Quad 4M × 32 banks (8192 rows × 512 columns × 32 bits per bank) with BA0/BA1 bank addressing and A0–A12 row addresses, A0–A8 column addresses.
• Performance: Fully synchronous operation with clock frequency options of 166 MHz and 133 MHz; CAS latency selectable at 2 or 3 and access times listed for both CL=2 and CL=3.
• Burst & Mode Control: Programmable Mode Register with burst length options 1, 2, 4, 8, or full page and burst type selectable between interleaved or linear.
• Interface & I/O: LVTTL-compatible interface; individual byte control via DQM0–DQM3 for byte masking and data control.
• Power & Supply: Power supply VDD/VDDQ specified at +3.3 V ±0.3 V (product data lists 3.0 V–3.6 V supply range).
• Refresh & Power Modes: Supports Auto Refresh and Self Refresh with a refresh count of 8192/64 ms and CKE-controlled Power Down/Self Refresh behavior.
• Package & Temperature: 90-ball WBGA (8 × 13 mm, 90-LFBGA) package; commercial operating temperature range 0°C to 70°C (TA).

Unique Advantages

• High-density 512 Mbit in a single package: Combines two 16Mx16 devices internally to present a 16M × 32 organization, simplifying board-level memory integration.
• Flexible timing and burst control: Selectable CAS latency (2 or 3) and multiple burst lengths/types allow tuning of latency and throughput to match system requirements.
• Synchronous pipelined architecture: Registered inputs/outputs on CLK and internal pipelining enable deterministic timing for synchronous system designs.
• Byte-level data control: Individual byte masking via DQM0–DQM3 supports partial-word operations and fine-grained data handling.
• Standardized power and interface: Operates from VDD/VDDQ +3.3 V ±0.3 V with LVTTL signaling for compatibility with common system logic levels.
• Built-in refresh management: Auto and Self Refresh support with defined refresh count reduces external refresh handling and preserves data during low-power modes.

Why Choose IS42S32160C-75BL-TR?

The IS42S32160C-75BL-TR provides a compact, high-density SDRAM solution with flexible timing and burst configurations suited for designs needing parallel SDRAM memory in a 90-ball WBGA footprint. Its fully synchronous, pipelined architecture and byte-level data control make it suitable for systems that require predictable timing and configurable data operations.

This device is appropriate for designers and procurement teams seeking a 512 Mbit SDRAM with selectable CAS latency, standardized 3.3 V supply range, and integrated refresh capabilities for reliable system memory implementation across commercial-temperature applications.

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