IS42S32160C-75BLI-TR

The IS42S32160C-75BLI-TR is a 512Mbit synchronous DRAM organized as 16M × 32 with a parallel memory interface. It implements a fully synchronous, internally pipelined architecture with registered inputs and outputs for predictable timing and high-speed data transfer.

Designed for systems requiring a compact, board-level SDRAM solution, this device offers selectable CAS latency, programmable burst modes, and standard 3.3 V supply operation to support a range of embedded and industrial designs.

Key Features

• Memory Core  The device is organized as 16M × 32 for a total of 512 Mbit, internally configured as quad 4M × 32 banks (4M × 32 × 4 banks).
• Synchronous, Pipelined Architecture  Fully synchronous operation with inputs and outputs registered on the rising edge of CLK and an internal pipelined architecture for high-speed transfers.
• Clock and Timing  Clock frequency up to 133 MHz for the -75 option; CAS latency selectable at 2 or 3 with access times as specified (access time 6 ns).
• Burst and Mode Control  Programmable mode with burst length options of 1, 2, 4, 8 or full page and selectable burst type (interleaved or linear).
• Power and I/O  Power supply VDD/VDDQ specified at +3.3 V ±0.3 V (3.0 V to 3.6 V) with LVTTL interface signaling.
• Refresh and Reliability  Supports Auto Refresh and Self Refresh with a refresh count of 8192 per 64 ms.
• Byte Masking  Individual byte control provided via DQM0–DQM3 signals.
• Package and Temperature  Available in a 90-ball WBGA (8 × 13 mm) / 90-LFBGA package and specified for operation from −40°C to 85°C (TA).

Typical Applications

• Embedded memory subsystems  Use as a 512 Mbit synchronous DRAM with parallel interface and standard 3.3 V supply in embedded designs requiring predictable, clocked memory access.
• Compact board-level memory  The 90-ball WBGA (8 × 13 mm) package supports compact PCB layouts where a small-footprint SDRAM is required.
• Temperature-critical designs  Operation from −40°C to 85°C makes the device suitable for systems that require extended ambient temperature ranges.

Unique Advantages

• Flexible timing options: Selectable CAS latency (2 or 3) and multiple burst lengths enable tuning of latency and throughput to match system timing requirements.
• Predictable synchronous interface: Registered inputs/outputs and operation synchronized to CLK simplify timing closure and integration with clocked memory controllers.
• Byte-level data control: DQM0–DQM3 support individual byte masking, allowing fine-grained write masking and partial-word updates.
• Built-in refresh management: Auto Refresh and Self Refresh modes with standard 8192/64 ms refresh count reduce system-level refresh management complexity.
• Standard 3.3 V supply compatibility: VDD/VDDQ at +3.3 V ±0.3 V aligns with common legacy supply rails for system compatibility.

Why Choose IS42S32160C-75BLI-TR?

The IS42S32160C-75BLI-TR combines a 512 Mbit capacity in a 16M × 32 organization with a fully synchronous, pipelined architecture to deliver deterministic, clocked memory performance. Its selectable CAS latencies, programmable burst modes, and byte-level masking provide design flexibility for timing-critical applications.

With a compact 90-ball WBGA footprint and an operating range from −40°C to 85°C, this SDRAM is suitable for board-level deployments that require a small-package, 3.3 V parallel memory solution with built-in refresh and low-level control signals for system integration.

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