IS42S32160D-6BI-TR

The IS42S32160D-6BI-TR is a 512 Mbit synchronous DRAM organized as 16M × 32, supplied in a 90‑TFBGA (8×13) package. It uses a fully synchronous, pipelined architecture with internal bank structures to support high-speed, low-latency memory operations.

Designed for systems that require parallel SDRAM with programmable burst control and robust refresh modes, the device delivers 166 MHz clock operation, 5.4 ns access time, and a wide operating range of 3.0–3.6 V and −40°C to +85°C (TA).

Key Features

• Memory Core & Organization  512 Mbit SDRAM with a 16M × 32 organization and internal bank architecture to hide row access/precharge.
• Fully Synchronous Pipeline  All input and output signals referenced to the rising edge of the clock to support predictable timing and high-speed transfers.
• Performance & Timing  Rated for 166 MHz clock operation with an access time of 5.4 ns (typical) and programmable CAS latency options (2 or 3 clocks).
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequences; supports burst read/write and burst read/single write operations with burst termination options.
• Refresh & Power Management  Auto Refresh (CBR) and Self Refresh supported, with 8K refresh cycles every 64 ms.
• Interface & Signaling  Parallel memory interface with LVTTL signaling.
• Power Supply  Operates from a 3.0–3.6 V VDD/VDDQ supply range.
• Package & Mounting  90‑ball TF‑BGA (8×13) supplier device package for compact board-level density.
• Operating Temperature  Specified for −40°C to +85°C (TA).

Typical Applications

• Embedded systems  Provides 512 Mbit of synchronous parallel DRAM in a compact 90‑TFBGA footprint for space-constrained embedded designs.
• High-speed data buffering  Designed for buffering and burst transfer workloads that benefit from 166 MHz operation and low access times.
• Industrial equipment  Supports extended temperature operation (−40°C to +85°C) and a 3.0–3.6 V supply for temperature-critical deployments.

Unique Advantages

• Optimized throughput: 166 MHz clock rating and 5.4 ns access time enable fast, deterministic memory access for bursty workloads.
• Configurable performance: Programmable CAS latency and selectable burst lengths/sequences let designers tune memory behavior to system timing needs.
• Efficient refresh management: Auto and self-refresh modes with 8K/64 ms refresh cycles reduce system-level refresh complexity.
• Compact packaging: 90‑TFBGA (8×13) provides a small board footprint for higher integration density.
• Wide operating envelope: 3.0–3.6 V supply range and −40°C to +85°C operating temperature support a broad set of deployment environments.

Why Choose IS42S32160D-6BI-TR?

The IS42S32160D-6BI-TR combines a fully synchronous, pipelined SDRAM architecture with programmable timing and burst control to deliver predictable, high-throughput memory for parallel-interface designs. Its combination of 166 MHz operation, low access time, and robust refresh modes makes it well suited to systems that require compact, reliable DRAM in a 90‑TFBGA package.

Engineers seeking a mid-capacity, parallel SDRAM solution for designs with space or thermal constraints will find this device a practical option—offering configurable performance, industrial-temperature operation, and a standard BGA footprint for board-level integration.

Request a quote or submit an RFQ to evaluate IS42S32160D-6BI-TR for your next design.