IS42S32160C-6BLI-TR

The IS42S32160C-6BLI-TR is a 512 Mbit synchronous DRAM (SDRAM) device organized as 16M × 32 and internally configured as a quad 4M × 32 DRAM. It uses a fully synchronous, pipelined architecture with registered inputs and outputs on the rising edge of CLK to enable high-speed, clocked data transfers.

This parallel SDRAM is suited for commercial and industrial systems that require a 512 Mbit memory solution in a compact 90-ball BGA (8 × 13 mm) package, offering programmable modes, burst operation, and on-chip refresh management for system memory applications.

Key Features

• Memory Architecture 512 Mbit SDRAM organized as 16M × 32 and internally configured as a quad 4M × 32 device with 4 banks (8192 rows × 512 columns × 32 bits per bank).
• High-Speed Operation Supports clock frequencies up to 166 MHz (also 133 MHz option) with selectable CAS latency of 2 or 3 and access times as low as 5.4 ns (CAS latency = 3).
• Burst and Mode Flexibility Programmable burst lengths of 1, 2, 4, 8 or full page with interleaved or linear burst type and programmable mode register settings.
• Power and I/O VDD/VDDQ supply of +3.3 V ± 0.3 V (noted range 3.0 V–3.6 V) with LVTTL interface signaling and individual byte masking via DQM0–DQM3.
• Refresh and Power Management Auto Refresh and Self Refresh support with a refresh count of 8192 per 64 ms; CKE pin controls clock enable and entry to low-power states.
• Package and Temperature 90-ball BGA package (8 × 13 mm) available in lead-free option and specified operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Commercial and Industrial Systems Board-level system memory where a 512 Mbit parallel SDRAM in a compact 90-ball BGA is required, with support for industrial temperature ranges.
• Parallel SDRAM Memory Expansion Designs needing a 16M × 32 organization and selectable CAS latency/burst modes for predictable, clocked data transfer.
• On-board Frame or Buffer Memory Use as a high-speed synchronous buffer or working memory where pipelined architecture and byte masking (DQM0–3) are beneficial.

Unique Advantages

• Flexible Performance Modes CAS latency selectable between 2 and 3 and multiple burst lengths allow tuning for latency or throughput requirements.
• Synchronous Pipelined Architecture Registered I/O on CLK and internal pipelining enable stable, clocked data transfers up to 166 MHz.
• Byte-level Control Individual byte masking via DQM0–DQM3 enables partial-word writes and finer-grain data handling.
• Robust Refresh and Power Features Auto Refresh and Self Refresh with CKE-controlled power-down behavior support low-power standby and reliable data retention during idle periods.
• Compact BGA Packaging 90-ball BGA (8 × 13 mm) with lead-free option provides a small form factor for high-density board designs.
• Wide Supply and Temperature Range Operates from 3.0 V to 3.6 V and across −40 °C to +85 °C, covering both commercial and industrial environments.

Why Choose IS42S32160C-6BLI-TR?

The IS42S32160C-6BLI-TR offers designers a fully synchronous, pipelined 512 Mbit SDRAM solution with selectable performance modes, on-chip refresh management, and byte-level control. Its 16M × 32 organization and support for up to 166 MHz operation make it suitable for system memory and buffering roles in commercial and industrial designs.

With a compact 90-ball BGA package, lead-free availability, and an operating range that spans −40 °C to +85 °C, this device provides a balance of performance, integration, and environmental tolerance for engineers specifying parallel SDRAM on board-level applications.

Request a quote or submit an inquiry to sales for availability, lead time, and pricing information for the IS42S32160C-6BLI-TR.