IS42S32160C-6BL

The IS42S32160C-6BL is a 512 Mbit synchronous DRAM device organized as 16M × 32, internally configured as a quad 4M × 32 memory array. It implements a fully synchronous, pipelined architecture with registered inputs and outputs on the rising edge of CLK.

Designed for systems that require parallel SDRAM memory, the device offers selectable CAS latency, flexible burst modes, and byte-level data masking, providing configurable performance and integration options for board-level memory subsystems.

Key Features

• Memory Organization — 512 Mbit density organized as 16M × 32, implemented internally as four 4M × 32 banks.
• High-speed Synchronous Operation — Supports clock operation up to 166 MHz (also supports 133 MHz); all inputs and outputs are registered on the rising edge of CLK.
• Programmable Timing and Burst Control — CAS latency programmable to 2 or 3; burst length options of 1, 2, 4, 8 or full page; burst type selectable as interleaved or linear.
• Internal Architecture — Pipelined internal architecture for high-speed data transfer and memory throughput.
• Refresh and Low-power Modes — Supports Auto Refresh and Self Refresh to maintain data integrity during refresh cycles.
• Byte-level Control — Individual bytes controlled via DQM0–DQM3 for selective masking of data bytes.
• Interface and Logic Levels — LVTTL interface signaling; all control and data signals operate synchronously with CLK.
• Power — VDD/VDDQ +3.3V ±0.3V (3.0V–3.6V supply range).
• Package — 90-ball WBGA package, 8 × 13 mm footprint (90-LFBGA/90-WBGA).
• Operating Temperature — Commercial range: 0°C to 70°C (TA).

Typical Applications

• Parallel SDRAM memory subsystems — Use as on-board DRAM for designs requiring a 512 Mbit parallel SDRAM device with selectable CAS latency and burst modes.
• High-throughput data buffering — Suitable for boards needing pipelined synchronous DRAM with byte-level masking and flexible burst control.
• Refresh-managed memory arrays — Systems that rely on Auto Refresh and Self Refresh mechanisms to maintain memory integrity over time.

Unique Advantages

• Flexible timing configuration: CAS latency of 2 or 3 and multiple burst-length options allow tuning for different system timing requirements.
• High-frequency operation: Support for up to 166 MHz clocking enables higher data throughput within the device’s specified operating range.
• Byte-level data control: DQM0–DQM3 provides individual byte masking for fine-grained data handling and error management.
• Compact BGA footprint: 90-ball WBGA (8 × 13 mm) package simplifies board integration where board space is constrained.
• Standard 3.3V supply: VDD/VDDQ +3.3V ±0.3V compatibility with common 3.3V system rails.
• Built-in refresh support: Auto Refresh and Self Refresh modes reduce firmware overhead for refresh management.

Why Choose IC DRAM 512MBIT PARALLEL 90WBGA?

The IS42S32160C-6BL positions itself as a configurable, board-level 512 Mbit SDRAM solution delivering synchronous, pipelined operation with selectable latency and burst options. Its combination of up to 166 MHz clocking, byte-level control, and standard 3.3V supply makes it suitable for designs that need a parallel SDRAM device with flexible timing and integration in a compact BGA package.

This device is well suited to engineers specifying commercial-temperature memory (0°C–70°C) for systems that require predictable synchronous behavior, selectable performance modes, and standard refresh mechanisms, backed by documented timing and electrical characteristics.

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