IS42S32160B-7TLI-TR
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 470 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S32160B-7TLI-TR – IC DRAM 512MBIT PAR 86TSOP II
The IS42S32160B-7TLI-TR is a 512Mbit synchronous DRAM organized as 16M × 32 with a quad-bank internal architecture. It implements a fully synchronous, pipeline design with all I/O referenced to the rising edge of the clock, delivering high-speed parallel memory access for systems requiring deterministic timing and burst transfers.
Designed for applications that need a 3.3V single-supply SDRAM solution, the device provides programmable burst operation, selectable CAS latency, and refresh modes, plus an industrial operating temperature option, enabling use in designs where sustained high-rate memory throughput and robust timing control are required.
Key Features
- Core / Architecture 512Mbit SDRAM organized as 16M × 32 bits with 4 banks (4M × 32 × 4 banks) and pipeline architecture for high-rate synchronous operation.
- Performance Supports clock frequencies to 143 MHz (device -7) with an access time of 5.4 ns at CAS latency = 3.
- Programmable Burst & Latency Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable at 2 or 3 clocks.
- Refresh & Power Management Auto Refresh and Self Refresh supported; 8192 refresh cycles per 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grades). Includes a power-down mode for power savings.
- Interface LVTTL-compatible inputs/outputs with a parallel memory interface and random column address capability every clock cycle during burst access.
- Voltage Single power supply operation at 3.3V ±0.3V (specified 3.0 V to 3.6 V).
- Package & Mounting Available in an 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) package suited for PCB surface mounting.
- Operating Temperature Industrial-grade option specified from -40°C to +85°C (TA).
Typical Applications
- Embedded systems Provides high-speed synchronous parallel memory for embedded controllers and memory subsystems that require predictable burst transfers and selectable CAS latency.
- Networking and communications Suitable for buffering and packet memory where pipeline synchronous access and bank interleaving improve sustained throughput.
- Industrial control Industrial temperature option (-40°C to +85°C) makes the device appropriate for control and instrumentation systems operating in wider temperature ranges.
- High-rate data buffering Programmable burst modes and random column address per clock cycle support applications that need repeated high-speed read/write bursts.
Unique Advantages
- High-speed synchronous operation: Supports up to 143 MHz (‑7 device) with 5.4 ns access time at CAS latency = 3 for demanding timing requirements.
- Flexible burst control and latency: Programmable burst lengths and CAS latency options (2 or 3 clocks) let designers match timing and throughput to system needs.
- Quad-bank architecture: Internal bank structure enables bank interleaving and hides row access/precharge to improve sustained burst performance.
- Single-supply simplicity: Operates from a single 3.3V ±0.3V supply (3.0–3.6V), simplifying power rail design.
- Power-saving refresh modes: Auto Refresh and Self Refresh plus power-down mode reduce standby power and simplify memory retention strategies.
- Industrial temperature support and compact package: -40°C to +85°C option and 86‑pin TSOP-II package enable dense board layouts in harsher environments.
Why Choose IS42S32160B-7TLI-TR?
The IS42S32160B-7TLI-TR combines a 512Mbit synchronous DRAM architecture with programmable burst and latency controls, a quad-bank design, and LVTTL-compatible parallel interface to deliver predictable, high-rate memory behavior for systems that require deterministic timing. Its single 3.3V supply, power-saving refresh modes, and industrial temperature option make it suitable for designs that balance performance with environmental robustness.
This device is well suited to engineers specifying memory for embedded platforms, networking buffers, industrial controllers, and other systems where synchronous burst capability, selectable CAS latency, and compact TSOP-II packaging are important selection criteria.
Request a quote or submit an inquiry to receive pricing and availability information for the IS42S32160B-7TLI-TR.