IS42S32160B-7TL

The IS42S32160B-7TL is a 512 Mbit synchronous DRAM (SDRAM) device organized as 16M × 32 with an internal quad-bank architecture and pipeline operation. It provides a fully synchronous, LVTTL-compatible parallel memory interface with registered inputs and outputs referenced to the rising edge of CLK.

Designed for commercial temperature-range systems, the device targets applications requiring high-speed parallel SDRAM in an 86‑TSOP II (0.400", 10.16 mm width) package, offering programmable burst modes, selectable CAS latency, and on-chip refresh options for reliable runtime operation.

Key Features

• Memory Core — 512 Mbit SDRAM organized as 16M × 32 (4M × 32 × 4 banks) to support wide, parallel data transfers and internal bank interleaving to hide row access/precharge time.
• Clock & Performance — Supports clock frequencies up to 143 MHz (–7 speed grade) with an access time from clock of 5.4 ns at CAS latency = 3; programmable CAS latency of 2 or 3 clocks.
• Burst and Access Modes — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential or interleave); burst read/write and burst read/single write capability with burst termination via stop or precharge command.
• Refresh & Power Management — Auto Refresh and Self Refresh supported; 8192 refresh cycles with timing options (e.g., 8K/64 ms for commercial grade) and a power-saving power-down mode.
• Interface — Parallel memory interface with LVTTL-compatible signals and the ability to present random column addresses every clock cycle during burst access.
• Supply & Temperature — Single 3.3 V power supply (operating range 3.0 V to 3.6 V) and commercial operating temperature range of 0°C to +70°C (TA).
• Package — Available in 86‑TSOP II (86‑TFSOP) package, 0.400" (10.16 mm) width, suitable for board-level mounting in space-conscious designs.

Typical Applications

• Commercial electronic systems — For designs operating within 0°C to +70°C that require 512 Mbit parallel SDRAM for high-speed data buffering and temporary storage.
• Board-level memory expansion — On‑board DRAM for systems needing a 16M × 32 memory organization in an 86‑TSOP II footprint.
• High-speed data buffering — Use where 143 MHz operation, programmable CAS latency and burst modes enable efficient burst read/write operations and random column access.

Unique Advantages

• Quad-bank architecture: Internal 4-bank organization and bank interleaving reduce effective latency by hiding precharge and row access time.
• Flexible burst control: Programmable burst lengths and sequence options allow designers to match memory throughput and access patterns to system requirements.
• Selectable CAS latency: CAS latency options (2 or 3 clocks) provide a balance between latency and maximum clock frequency for performance tuning.
• On-chip refresh and low-power modes: Auto Refresh, Self Refresh and power-down modes simplify refresh management and support power-sensitive designs.
• Standard supply and signaling: Single 3.3 V supply and LVTTL-compatible interface enable straightforward integration into common memory subsystem designs.

Why Choose IS42S32160B-7TL?

The IS42S32160B-7TL delivers a combination of high-speed synchronous operation and flexible memory control in a compact 86‑TSOP II package. With programmable CAS latency, multiple burst modes, and on-chip refresh features, it is well suited for commercial systems that demand predictable timing, wide parallel data paths, and board-level integration.

This device is appropriate for designers who require a 512 Mbit parallel SDRAM solution with explicit timing options (5.4 ns access from clock at CL=3, 143 MHz operation) and a standard 3.3 V supply window, providing a reliable component choice for memory subsystems in commercial temperature-range applications.

If you would like pricing, availability, or a formal quote for IS42S32160B-7TL, request a quote or contact the sales team to discuss options and lead times.