IS42S32160B-7BL

The IS42S32160B-7BL is a 512Mbit synchronous DRAM organized as 16M × 32 with an internal quad-bank architecture (4M × 32 × 4 banks). It is a fully synchronous memory device designed for 3.3V systems and optimized for pipeline burst transfers and high-speed, clocked operation.

Targeted for commercial-temperature applications (0°C to +70°C), this device delivers programmable burst operation, selectable CAS latency, and built-in refresh modes to support memory subsystems requiring predictable, clock-referenced DRAM behavior.

Key Features

• Memory Architecture  512Mbit SDRAM organized as 16M × 32 with four internal banks (4M × 32 × 4), enabling bank interleaving and hidden row access/precharge.
• Clocked Performance  Supports a clock frequency of 143 MHz (‑7 device) with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential/interleave); CAS latency programmable to 2 or 3 clocks.
• Refresh and Power Modes  Auto Refresh (CBR) and Self Refresh supported; refresh cycles and timing options documented per device grade (8192 cycles per refresh interval as specified).
• Supply and I/O  Single power supply: 3.3V ±0.3V (listed voltage range 3.0V–3.6V) with LVTTL-compatible inputs/outputs.
• Package and Mounting  Supplied in a 90-ball low-profile BGA (90‑LFBGA, 13 × 11); W‑BGA package option noted in device documentation.
• Operating Range  Commercial operating temperature: 0°C to +70°C (TA).

Unique Advantages

• Synchronous, clock-referenced operation: Enables predictable timing and pipeline burst transfers tied to a positive clock edge for precise system integration.
• Banked architecture for throughput: Four internal banks and bank interleaving hide row precharge times to improve sustained burst performance.
• Flexible burst and CAS settings: Programmable burst lengths and CAS latencies (2 or 3) allow tuning for system timing and throughput requirements.
• Standard 3.3V single-supply: Compatible with common 3.3V memory systems (3.0–3.6V operating range) for straightforward power design.
• Compact BGA package: 90-LFBGA (13×11) offers a space-efficient footprint for dense board layouts.
• Integrated refresh management: Auto and self-refresh modes simplify memory maintenance and power-management sequencing.

Why Choose IS42S32160B-7BL?

The IS42S32160B-7BL provides a high-capacity 512Mbit synchronous DRAM option with a quad-bank architecture and programmable timing features that make it well suited for 3.3V memory subsystems operating in commercial temperature ranges. Its combination of banked internal architecture, selectable CAS latency, and flexible burst modes enables designers to balance latency and throughput according to system needs.

This device is appropriate for designs that require a compact 90-LFBGA package and deterministic, clock-referenced DRAM behavior, backed by documented timing parameters and refresh options for reliable system integration.

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