IS42S32160B-75TL-TR

The IS42S32160B-75TL-TR is a 512 Mbit synchronous DRAM organized as 16M × 32 with four internal banks. It delivers parallel SDRAM performance with a programmable mode register, selectable CAS latency, and burst operation for systems that require deterministic, high-throughput memory transactions.

Designed for board-level memory expansion in commercial temperature environments, the device targets applications needing high memory bandwidth and flexible burst/read/write control while operating from a single +3.3 V power rail.

Key Features

• Memory Architecture — 512 Mbit SDRAM organized as 16M × 32 with four internal banks (4M × 32 × 4 banks) for banked access and improved command throughput.
• Synchronous DRAM Performance — Fully synchronous operation with internal pipelined architecture and clock rates supporting up to 133 MHz (CAS latency = 2) for low-latency access (specified access time ~5.5 ns).
• Burst and Latency Options — Programmable CAS latency (2 or 3) and selectable burst lengths of 1, 2, 4, 8, or full page with interleaved or linear burst type and burst stop capability.
• Refresh and Power — Auto Refresh and Self Refresh support with 8K refresh cycles per 64 ms; single +3.3 V ±0.3 V supply (3.0–3.6 V) simplifies power design.
• Byte Control and Interface — Individual byte masking via DQM0–DQM3 and LVTTL-compatible interface signals for parallel system connectivity.
• Package and Mounting — Available in 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) for board-level mounting; other package options noted in specification family.
• Commercial Temperature — Specified operating temperature range 0°C to +70°C (TA) for commercial applications.

Typical Applications

• Embedded Systems — Provides high-throughput working memory for embedded controllers and processors that use parallel SDRAM interfaces.
• Communications and Networking — Suited for buffering and packet memory in systems where banked, low-latency SDRAM access improves throughput.
• Consumer and Commercial Electronics — Board-level memory expansion in devices operating within the 0°C to +70°C range that require flexible burst modes and byte masking.
• General Purpose Memory Subsystems — Useful as a parallel SDRAM component in designs requiring programmable burst lengths, CAS latency selection, and self-refresh capability.

Unique Advantages

• Banked Quad-Organization: Four internal banks (4M × 32 × 4) enable interleaved access patterns and improved command concurrency for higher effective throughput.
• Flexible Burst Control: Programmable burst lengths and burst-type selection allow designers to tune memory transfers for sequential or interleaved access patterns.
• Selectable CAS Latency: CAS latency options of 2 or 3 give designers trade-offs between clock rate and access timing to match system timing requirements.
• Single 3.3 V Power Rail: Standard +3.3 V supply operation (±0.3 V) simplifies power distribution and integration into legacy 3.3 V systems.
• Byte-Level Masking: DQM0–DQM3 individual byte control supports partial-write operations and finer-grained data masking.
• Commercial Temperature Rating: Specified 0°C to +70°C operation aligns with common commercial electronics deployment scenarios.

Why Choose IS42S32160B-75TL-TR?

The IS42S32160B-75TL-TR is positioned for designs that require a reliable, parallel SDRAM component with programmable burst behavior, selectable CAS latency, and banked architecture to improve effective memory throughput. Its single +3.3 V supply, byte masking, and refresh options provide the control needed for system-level memory management.

This device is appropriate for engineers building commercial embedded systems, networking equipment, or consumer/commercial electronics that need deterministic SDRAM performance and straightforward board-level integration in an 86-pin TSOP-II package.

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