IS42S32160B-75ETLI-TR

The IS42S32160B-75ETLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with a quad-bank architecture. It implements a fully synchronous, pipelined design with registered inputs/outputs referenced to the rising clock edge for high-speed parallel memory operations.

This device is suitable for systems requiring a 512 Mbit parallel SDRAM solution operating from a 3.0 V to 3.6 V supply and supporting industrial temperature ranges, programmable burst modes, and standard 86‑TSOP II packaging.

Key Features

• Memory Architecture 512 Mbit SDRAM organized as 16M × 32 with 4 internal banks (4M × 32 × 4 banks) to enable interleaved access and hidden precharge.
• Synchronous Operation Fully synchronous design with all signals referenced to the positive clock edge and LVTTL-compatible inputs/outputs.
• Performance / Timing Supports clock frequencies up to 133 MHz (device -75 option) and access time from clock as low as 5.5 ns (CAS latency = 2, -75E rating).
• Programmable Burst Control Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Modes Auto Refresh and Self Refresh capability with 8192 refresh cycles; refresh interval options of 16 ms or 64 ms depending on device grade.
• Supply Voltage Single power supply operation at 3.3 V ±0.3 V (specified range 3.0 V to 3.6 V).
• Package & Mounting 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) package for standard surface-mount assembly.
• Operating Temperature Rated for −40°C to +85°C (TA) for industrial applications.

Typical Applications

• High‑speed memory subsystems — Used where parallel synchronous DRAM is required for burst and pipelined data transfers.
• Industrial systems — Suitable for designs operating across −40°C to +85°C that require a 512 Mbit SDRAM component.
• Legacy parallel-interface designs — Fits applications that integrate a parallel SDRAM interface and standard TSOP‑II packaging.

Unique Advantages

• High density, compact footprint: 512 Mbit capacity in a standard 86‑TSOP II package conserves board area while providing substantial memory.
• Flexible burst and sequencing: Programmable burst lengths and sequential/interleave modes simplify tuning for specific access patterns.
• Predictable synchronous timing: Registered I/O referenced to clock edges and programmable CAS latency (2 or 3 clocks) enable consistent, deterministic timing.
• Industrial temperature range: Specified operation from −40°C to +85°C supports deployment in temperature-challenging environments.
• Standard 3.3 V supply: Operates within a 3.0 V to 3.6 V range (3.3 V ±0.3 V), matching common system power rails.

Why Choose IS42S32160B-75ETLI-TR?

The IS42S32160B-75ETLI-TR combines a 512 Mbit SDRAM density with a quad-bank, fully synchronous architecture to deliver burst-capable, high-throughput parallel memory for systems designed around 3.3 V memory interfaces. Its programmable burst options, selectable CAS latency, and LVTTL signaling provide design flexibility for timing-critical applications.

With industrial temperature rating and a standard 86‑TSOP II package, this device is positioned for embedded and system-level memory subsystems that need predictable synchronous performance and a compact form factor from Integrated Silicon Solution, Inc.

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