IS42S32160B-75BL-TR

The IS42S32160B-75BL-TR is a 512 Mbit synchronous DRAM organized as 16M × 32 with four internal banks. It implements a fully synchronous, pipelined architecture with a parallel LVTTL interface and supports programmable burst modes and auto/self refresh.

Designed for applications requiring high memory bandwidth and flexible burst access, this device offers selectable CAS latency, high-speed clock operation, and standard 3.3 V supply operation for board-level SDRAM subsystems.

Key Features

• Memory Architecture  Quad-bank organization (4M × 32 × 4 banks) arranged as 8192 rows × 512 columns × 32 bits, providing a 512 Mbit memory capacity.
• Synchronous SDRAM  Fully synchronous operation with all inputs registered on the positive clock edge and an internal pipelined architecture for predictable timing.
• Clock & Timing  Supports clock rates up to 143 MHz (CAS latency 3) and 133 MHz (CAS latency 2); access time from clock specified at 5.4 ns in the datasheet.
• Programmable Burst & CAS  Selectable CAS latency of 2 or 3 and programmable burst lengths (1, 2, 4, 8, or full page) with linear or interleaved burst types and burst stop function.
• Refresh & Power  Auto Refresh and Self Refresh supported with 8K refresh cycles per 64 ms (15.6 µs/row); single +3.3 V ±0.3 V power supply.
• Data Control & Interface  Individual byte control via DQM0–DQM3 and LVTTL-compatible interface for parallel SDRAM systems.
• Package  90-ball LFBGA package (13 × 11 mm) with 0.8 mm ball pitch and 0.45 mm ball size; available in lead-free package options.
• Operating Temperature  Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• High-bandwidth memory subsystems  Used where a 512 Mbit, 16M × 32, quad-bank SDRAM with programmable burst modes is required to support sustained data throughput.
• Synchronous system memory  For systems that rely on a LVTTL synchronous DRAM interface and standard +3.3 V supply for board-level memory expansion.
• Refresh-managed designs  Applicable to designs that require Auto Refresh or Self Refresh with 8K refresh cycles per 64 ms for row retention management.

Unique Advantages

• Flexible burst performance  Programmable burst lengths and burst types plus CAS latency options allow tuning of throughput and latency to match system requirements.
• Parallel, byte-controlled data paths  Individual DQM0–DQM3 byte masking enables precise control over data writes and reads on a 32-bit bus.
• Predictable synchronous timing  Fully synchronous operation with a pipelined architecture and defined clock-frequency/CAS timing supports deterministic memory access.
• Standard power and refresh profile  Single +3.3 V supply and built-in Auto/Self Refresh simplify power and refresh management on the board.
• Compact BGA package  90-ball LFBGA (13 × 11 mm, 0.8 mm pitch) provides a space-efficient footprint for high-density memory applications.

Why Choose IS42S32160B-75BL-TR?

The IS42S32160B-75BL-TR positions itself as a straightforward, high-bandwidth SDRAM component for designs that need a 512 Mbit parallel memory with flexible burst operation, selectable CAS latency, and standard 3.3 V operation. Its four-bank architecture, synchronous pipelined design, and built-in refresh modes make it well suited for systems that require predictable timing and sustained data throughput.

This device is appropriate for engineers specifying board-level SDRAM capacity where compact BGA packaging, LVTTL interface compatibility, and commercial temperature operation are required. The availability of lead-free packaging and established timing parameters supports reliable integration into production designs.

Request a quote or submit an inquiry to receive pricing and availability information for the IS42S32160B-75BL-TR or to discuss technical integration details.