IS42S32160B-6TLI

The IS42S32160B-6TLI is a 512 Mbit synchronous DRAM organized as 16M × 32 with a quad-bank architecture and a fully synchronous interface. It implements pipeline transfer, programmable burst modes and internal bank interleaving to support high-rate, burst-oriented memory access patterns.

Supplied in an 86‑pin TSOP‑II package and specified for operation from -40°C to +85°C, this device targets systems that require high-speed parallel SDRAM with selectable CAS latency, flexible burst control, and standard LVTTL signaling.

Key Features

• Memory Capacity & Organization 512 Mbit density, organized as 16M × 32 with four internal banks (4M × 32 × 4 banks) for parallel, banked access.
• Synchronous SDRAM Architecture Fully synchronous operation with all signals referenced to the rising edge of CLK; supports LVTTL-compatible I/O.
• Clocking & Timing Supports up to 166 MHz clock frequency with programmable CAS latency (2 or 3 clocks). Typical access time from clock is 5.4 ns at CAS‑3.
• Burst Control Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with burst termination options.
• Refresh & Power Modes Auto Refresh (CBR) and Self Refresh supported; refresh cycles configurable per device grade (8192 cycles in 16 ms or 64 ms depending on grade).
• Power Single power supply operation with listed supply range of 3.0 V to 3.6 V (device specified nominally at 3.3 V ±0.3 V).
• Package & Mechanical 86‑TFSOP / 86‑TSOP II package (0.400", 10.16 mm width) optimized for compact board mounting.
• Operating Range Specified ambient operating temperature range: -40°C to +85°C (TA).

Typical Applications

• Embedded and Industrial Systems 512 Mbit of synchronous DRAM for embedded controllers and industrial electronics requiring -40°C to +85°C operation.
• High‑speed Buffers and Frame Memory Burst read/write and programmable burst lengths make the device suitable for designs that need predictable, high-rate data bursts and automatic column address generation.
• Networking and Communication Equipment Pipeline architecture and random column address capability every clock cycle support packet buffering and intermediary data storage in parallel memory subsystems.

Unique Advantages

• High throughput at 166 MHz: Supports up to 166 MHz clocking for low-latency synchronous transfers (CAS‑3 access time of 5.4 ns).
• Flexible memory timing: Programmable CAS latency (2 or 3 clocks) and multiple burst length/sequence options allow tuning for system timing and bandwidth requirements.
• Banked architecture for reduced latency: Four internal banks and internal precharge/bank interleave hide row access time and improve sustained access efficiency.
• Robust temperature range: Specified for -40°C to +85°C ambient operation to suit temperature-challenged deployments.
• Compact TSOP‑II package: 86‑pin TSOP‑II footprint provides a space-efficient solution for board-level memory integration.
• Low-power standby options: Auto refresh and self-refresh modes support power-saving operation during idle periods.

Why Choose IC DRAM 512MBIT PAR 86TSOP II?

The IS42S32160B-6TLI provides a balanced combination of high-speed synchronous operation, flexible burst and timing control, and a compact TSOP‑II package. Its quad-bank organization and pipeline architecture are suited to designs that require predictable burst performance and effective hiding of row access/precharge times.

This device is appropriate for engineers specifying parallel SDRAM in embedded, industrial, or high-throughput buffer applications where a 512 Mbit density, 3.0–3.6 V supply range, and -40°C to +85°C operation are required. Its configurable timing and refresh options support a range of system designs and operational modes.

Request a quote or submit a sales inquiry to obtain pricing, lead times and availability for the IS42S32160B-6TLI.