IS42S32160A-75BLI

The IS42S32160A-75BLI is a 512‑Mbit synchronous DRAM (SDRAM) implemented as a quad 4M × 32 device with a fully synchronous, pipelined architecture. It operates with a parallel LVTTL interface and is designed for applications requiring high memory bandwidth and predictable, high-speed memory transfers.

Key architectural elements include four internal banks, programmable burst operation, and support for Auto and Self Refresh. The device is supplied from a single +3.3 V ±0.3 V rail and is available in a compact 90‑ball LF‑BGA (8 × 13 mm) package with industrial temperature option.

Key Features

• Memory Core 512‑Mbit SDRAM organized as 16M × 32 (4M × 32 × 4 banks) for wide‑word data operations.
• Performance Clock rate up to 133 MHz with an access time of 6 ns and CAS‑Latency selectable at 2 or 3 to support high‑speed, low‑latency access patterns.
• Burst and Mode Flexibility Programmable burst lengths (1, 2, 4, 8, or full page) with interleaved or linear burst types and burst stop capability; programmable mode register allows system optimization.
• Bank and Command Architecture Four internal banks with concurrent auto precharge and internal pipelined architecture for efficient command sequencing and throughput.
• Data Mask and Byte Control Individual byte control via DQM0–DQM3 for selective data masking during write operations.
• Refresh and Low‑Power Options Auto Refresh and Self Refresh supported; 8K refresh cycles/64 ms (standard) and 8K/32 ms for industrial grade operation.
• Power and Interface Single +3.3 V ±0.3 V supply (3.0–3.6 V) with LVTTL interface signaling for compatibility with parallel SDRAM controller designs.
• Package and Temperature 90‑ball LF‑BGA (8 × 13 mm, 0.8 mm ball pitch) with a specified operating temperature range of –40 °C to 85 °C (TA).

Typical Applications

• High‑bandwidth systems For designs that require sustained memory throughput, the IS42S32160A-75BLI provides synchronous, burstable access and a pipelined architecture to support heavy data movement.
• Parallel SDRAM memory subsystems Suited for systems using parallel LVTTL SDRAM interfaces where 16M × 32 organization and byte masking are required.
• Industrial equipment Available in industrial temperature range and an industrial refresh option (8K/32 ms), making it appropriate for temperature‑sensitive embedded applications.

Unique Advantages

• Wide‑word, high‑density memory 16M × 32 organization across four banks delivers a 512‑Mbit density with 32‑bit data paths for wider data transfers.
• Flexible burst operation Programmable burst lengths and burst type selection enable tuning for sequential or random access patterns to match system requirements.
• Low‑latency options CAS‑Latency 2 or 3 and a 6 ns access time provide options to balance latency and timing margins in system design.
• Robust refresh management Both Auto and Self Refresh modes with specified refresh cycles accommodate standard and industrial refresh timing needs.
• Compact BGA footprint 90‑ball LF‑BGA (8 × 13 mm) reduces PCB area while providing a dense pinout for parallel memory designs.
• Simplified power domain Single +3.3 V ±0.3 V supply simplifies power rail design for embedded systems.

Why Choose IC DRAM 512MBIT PAR 90LFBGA?

The IS42S32160A-75BLI positions itself as a high‑speed, high‑density SDRAM option for designs that require predictable synchronous operation, flexible burst modes, and wide‑word data transfers. Its four‑bank architecture, programmable modes, and LVTTL interface make it suitable for parallel memory subsystems that need controlled timing and throughput.

Engineers designing systems that demand a compact package, industrial temperature operation, and standard 3.3 V power compatibility will find the device aligns with those hardware constraints while offering refresh and byte‑masking features useful for embedded and industrial memory applications.

Request a quote or submit an inquiry to discuss availability and pricing for the IS42S32160A-75BLI.