IS42S32160A-75B-TR

The IS42S32160A-75B-TR is a 512‑Mbit synchronous DRAM device configured as a quad 4M × 32 architecture with fully synchronous operation and an internal pipelined structure. It implements four internal banks, programmable modes, and a parallel LVTTL interface to support designs that require managed burst access and high memory bandwidth.

Key use cases include systems that need high-throughput DRAM with flexible burst lengths and CAS latency options. The device supports a 133 MHz clock rate and is supplied from a single +3.3V ±0.3V rail in a 90‑ball LF‑BGA package (8×13 mm).

Key Features

• Core & Architecture Quad 4M × 32 internal bank organization (16M × 32 total) with internal pipelined architecture to support concurrent operations across banks.
• Memory Organization 512 Mbit total capacity arranged as 16M × 32 (4 banks of 4M × 32), providing wide data paths for parallel transfers.
• Performance Fully synchronous operation with a clock rate of 133 MHz and selectable CAS latency of 2 or 3; access time listed as 6 ns.
• Burst & Mode Control Programmable burst lengths (1, 2, 4, 8 or full page), burst type (interleaved or linear), burst stop and programmable Mode Register settings.
• Refresh & Power Control Support for Auto Refresh and Self Refresh; standard refresh requirement of 8K cycles/64 ms (8K/32 ms noted for industrial grade).
• Byte Control Individual byte masking via DQM0–DQM3 for selective data strobe and masking during writes.
• Interface & Signaling LVTTL input/output signaling with all inputs sampled on the positive clock edge (CLK) and synchronous command sampling.
• Power & Supply Single supply: +3.3 V ±0.3 V (3.0 V – 3.6 V).
• Package & Mounting 90‑ball LF‑BGA (8 × 13 mm), ball pitch 0.8 mm, ball size 0.45 mm; Pb‑free package is available and industrial temperature variants are offered.
• Operating Temperature Commercial operating range shown as 0 °C to 70 °C (TA).

Typical Applications

• High‑bandwidth embedded systems — Use where parallel, high-throughput DRAM access and programmable burst behavior are required to move large blocks of data efficiently.
• Memory buffering and data processing — Suitable for buffering tasks that benefit from wide 32‑bit data paths and selectable burst lengths.
• Synchronous DRAM interface designs — Fits systems that rely on fully synchronous, clocked memory operation with LVTTL signaling and programmable CAS latency.

Unique Advantages

• Flexible burst control: Programmable burst lengths and burst type selection allow tuning for varied access patterns and system requirements.
• Banked architecture for concurrent access: Four internal banks reduce bank conflicts and help maintain throughput for interleaved access patterns.
• Selectable latency and timing: CAS latency options (2 or 3) and a 133 MHz clock rate provide predictable timing choices for system timing budgets.
• Comprehensive refresh modes: Auto Refresh and Self Refresh support simplifies memory maintenance across power and idle states; industrial refresh timing is documented separately.
• Compact BGA package: 90‑ball LF‑BGA (8×13 mm) provides a small footprint for high-density board designs, with Pb‑free and industrial variants available.
• Standard 3.3 V supply: Single +3.3 V ±0.3 V supply simplifies power rail requirements in systems using legacy 3.3 V logic domains.

Why Choose IC DRAM 512MBIT PAR 90LFBGA?

The IS42S32160A-75B-TR delivers a synchronous, banked DRAM architecture designed for applications that require controlled, high‑throughput memory access and flexible burst operation. Its combination of a 16M × 32 organization, 133 MHz clocking, programmable mode register, and multiple refresh modes makes it a practical choice for embedded systems and designs that need predictable timing and scalable bandwidth.

This device is suited to engineers seeking a parallel SDRAM solution in a compact 90‑LFBGA package with support for byte masking, selectable CAS latency, and industry‑documented refresh behavior. Availability of Pb‑free packaging and industrial temperature options adds deployment flexibility across different board-level requirements.

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