IS42S32160A-75BI-TR

The IS42S32160A-75BI-TR is a 512‑Mbit synchronous DRAM (SDRAM) device organized as 16M × 32 with four internal banks and a fully synchronous, pipelined architecture. It operates with a single +3.3V ±0.3V supply and supports a 133 MHz clock for registered signal timing.

Designed for applications requiring high memory bandwidth, the device provides programmable burst lengths, selectable CAS latency, byte-level data masking, and standard SDRAM refresh modes, all in a compact 90‑ball LF‑BGA (8 × 13 mm) package and an operating temperature range of −40°C to 85°C.

Key Features

• Memory Core 512‑Mbit SDRAM organized as 4M × 32 with four internal banks (stacked from two 16M × 16 devices) for parallel 32‑bit operation.
• High‑speed Operation Clock rate up to 133 MHz with an access time of 6 ns and an internal pipelined architecture to support continuous data transfers.
• Programmable Timing and Burst Modes CAS latency selectable at 2 or 3 and programmable burst lengths of 1, 2, 4, 8 or full page; burst type supports interleaved or linear modes with burst stop.
• Byte‑level Control Individual byte masking via DQM0–DQM3 enables selective write masking and data control across the 32‑bit interface.
• Refresh and Low‑power Modes Supports Auto Refresh and Self Refresh with 8K refresh cycles per 64 ms (standard) and 8K per 32 ms for industrial grade; includes Power Down and Self Refresh modes controlled by CKE.
• Supply and I/O Single +3.3V ±0.3V supply with LVTTL interface signalling for synchronous system integration.
• Package and Mechanical 90‑ball low‑profile BGA (LF‑BGA) package, 8 × 13 mm, ball pitch 0.8 mm and ball size 0.45 mm for space‑efficient board mounting.
• Operating Range Specified operating ambient temperature range of −40°C to 85°C.

Typical Applications

• High‑bandwidth embedded systems Used where sustained synchronous memory transfers and configurable burst behavior are required for data buffering and working memory.
• Networking and communications equipment Suitable for buffering and packet handling functions that benefit from 32‑bit parallel access and high clock rates.
• Industrial controllers and systems Available industrial refresh option and −40°C to 85°C operating range make it applicable to industrial electronics requiring reliable SDRAM operation.

Unique Advantages

• Parallel 32‑bit architecture: Four internal banks and a 32‑bit data path enable wide, parallel transfers for higher throughput in bandwidth‑sensitive designs.
• Flexible performance tuning: Selectable CAS latency (2 or 3) and multiple burst length/type options let systems optimize latency versus throughput.
• Precise byte control: DQM0–DQM3 supports individual byte masking for fine‑grained write control and data integrity during partial writes.
• Compact BGA footprint: 90‑ball LF‑BGA (8 × 13 mm) package reduces PCB area while supporting high‑pin density routing.
• Robust refresh and power modes: Auto and Self Refresh plus Power Down support system power management and reliable data retention across operating conditions.

Why Choose IS42S32160A-75BI-TR?

The IS42S32160A-75BI-TR combines a 512‑Mbit SDRAM organization with a fully synchronous, pipelined architecture and multi‑bank operation to deliver predictable, high‑throughput memory behavior. Its selectable timing parameters, burst flexibility, and byte‑level masking make it well suited to designs that need configurable performance and precise data control.

This device is appropriate for engineers building systems that demand parallel 32‑bit memory access in a compact LF‑BGA package and that operate across a wide temperature range. The device’s refresh options and low‑power modes support integration into systems requiring robust memory management and power control.

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