IS42S32160A-75B

The IS42S32160A-75B is a 512‑Mbit synchronous DRAM organized as 16M × 32 with four internal banks. It implements a fully synchronous, pipelined architecture with a parallel memory interface and a 133 MHz clock rate for high-throughput memory operations.

Designed for systems that require high memory bandwidth, the device supports programmable burst lengths, selectable CAS latency, and integrated refresh management to simplify memory subsystem design while operating from a single 3.3 V supply.

Key Features

• Core Architecture  Quad-bank organization (4M × 32bit × 4 bank) with internal pipelined architecture supporting concurrent auto precharge and registered command timing.
• Memory Capacity & Organization  512 Mbit total, organized as 16M × 32 with burst lengths of 1, 2, 4, 8, or full page and selectable burst type (interleaved or linear).
• Performance  Clock rate up to 133 MHz and programmable CAS latency of 2 or 3; typical access time noted as 6 ns.
• Refresh & Power Management  Supports Auto Refresh and Self Refresh with 8K refresh cycles/64 ms (and 8K/32 ms for industrial grade); single +3.3 V ±0.3 V power supply and LVTTL interface.
• Byte Control & Mode  Individual byte control via DQM0–3 and a programmable mode register to select operation modes that match system requirements.
• Package & Supply  90‑ball LF‑BGA (8 × 13 mm, 0.8 mm pitch) in a compact 90‑LFBGA package; Pb‑free package option available.
• Operating Range  Standard operating ambient range of 0 °C to 70 °C (TA); industrial temperature versions are available per product documentation.

Typical Applications

• High‑bandwidth embedded systems  Used where sustained throughput is required for working memory and data buffering in embedded platforms.
• Memory subsystems  Suitable as a parallel SDRAM component in designs requiring a 512‑Mbit DRAM with programmable burst behavior and byte masking.
• Systems with synchronous memory interfaces  Fits designs that sample commands on a positive clock edge and require fully synchronous operation with LVTTL signaling.

Unique Advantages

• Flexible burst control: Programmable burst lengths and burst type provide adaptable access patterns to match varied data-transfer needs.
• Byte‑level write control: DQM0–3 enables individual byte masking for more efficient partial‑word write operations.
• Simplified refresh management: Auto and Self Refresh modes with documented refresh cycle timing reduce software overhead for memory maintenance.
• Compact BGA package: 90‑LFBGA (8×13 mm) footprint conserves board area while supporting a wide data bus (32‑bit) for bandwidth efficiency.
• Single 3.3 V supply: Standard +3.3 V ±0.3 V operation simplifies power rail requirements in existing 3.3 V systems.

Why Choose IS42S32160A-75B?

The IS42S32160A-75B delivers a synchronous, pipelined 512‑Mbit DRAM solution built for designs that demand structured, high‑bandwidth memory access. With programmable latency and burst options, individual byte control, and integrated refresh features, it offers predictable timing and flexible operation for parallel memory subsystems.

This device is well suited to engineers specifying a compact BGA package, LVTTL interface, and a 3.3 V power domain. Industrial temperature options and a Pb‑free package choice provide additional selection flexibility for varied deployment environments.

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