IS42S16800J-7TLI-TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 617 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization8M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16800J-7TLI-TR – IC DRAM 128MBIT PAR 54TSOP II

The IS42S16800J-7TLI-TR is a 128 Mbit SDRAM device organized as 8M × 16, supplied in a 54-TSOP II package (0.400", 10.16 mm width). It implements a parallel DRAM architecture with an LVTTL memory interface and a supply voltage range of 3.0 V to 3.6 V.

Targeted for systems that require external SDRAM storage, the device offers a 143 MHz clock frequency and a 5.4 ns access time, and is specified for operation from −40°C to 85°C (TA).

Key Features

  • Memory Core 128 Mbit DRAM organized as 8M × 16, providing parallel DRAM storage in a compact footprint.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns to meet moderate-speed memory requirements.
  • Interface LVTTL memory interface for compatibility with TTL signaling domains.
  • Power Operates from a 3.0 V to 3.6 V supply range, suitable for standard 3 V DRAM power rails.
  • Package 54-TSOP II (0.400", 10.16 mm width) supplier device package for board-level integration where this footprint is required.
  • Operating Range Specified for −40°C to 85°C ambient temperature (TA) for use in environments within this range.
  • Memory Format Volatile SDRAM memory format intended for temporary system memory and buffering applications.

Typical Applications

  • Embedded systems — External SDRAM storage for embedded designs that require a 128 Mbit parallel memory interface.
  • Buffer memory — Frame or data buffering where 8M × 16 organization and 143 MHz clocking meet throughput needs.
  • Board-level memory expansion — Drop-in DRAM option for designs using the 54-TSOP II package footprint and LVTTL signaling.

Unique Advantages

  • Compact TSOP II footprint: The 54-TSOP II package (0.400", 10.16 mm) enables dense board-level placement while maintaining a standard supplier package.
  • Measured performance: 143 MHz clocking combined with a 5.4 ns access time provides predictable timing for system memory operations.
  • Standard LVTTL interface: Simplifies interfacing to TTL-compatible memory controllers and logic.
  • Wide operating voltage range: 3.0 V to 3.6 V operation accommodates common 3 V DRAM power rails.
  • Extended ambient temperature: Rated for −40°C to 85°C (TA) to support a range of environmental conditions within that span.

Why Choose IS42S16800J-7TLI-TR?

The IS42S16800J-7TLI-TR provides a straightforward SDRAM solution for designs requiring 128 Mbit of parallel DRAM with LVTTL signaling and a 54-TSOP II package. Its specified clock frequency, access time, and supply range make it suitable for systems that need predictable DRAM timing and compatibility with standard 3 V power rails.

This device is appropriate for engineers and procurement teams specifying board-level memory expansion or buffer memory in embedded and electronic systems operating within −40°C to 85°C. Selection of this device supports consistent performance and a known package footprint for integration into existing board layouts.

Request a quote or submit an inquiry for availability and pricing for the IS42S16800J-7TLI-TR to evaluate it for your next design.

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