IS42S16800J-7TLI-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 617 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S16800J-7TLI-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS42S16800J-7TLI-TR is a 128 Mbit SDRAM device organized as 8M × 16, supplied in a 54-TSOP II package (0.400", 10.16 mm width). It implements a parallel DRAM architecture with an LVTTL memory interface and a supply voltage range of 3.0 V to 3.6 V.
Targeted for systems that require external SDRAM storage, the device offers a 143 MHz clock frequency and a 5.4 ns access time, and is specified for operation from −40°C to 85°C (TA).
Key Features
- Memory Core 128 Mbit DRAM organized as 8M × 16, providing parallel DRAM storage in a compact footprint.
- Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns to meet moderate-speed memory requirements.
- Interface LVTTL memory interface for compatibility with TTL signaling domains.
- Power Operates from a 3.0 V to 3.6 V supply range, suitable for standard 3 V DRAM power rails.
- Package 54-TSOP II (0.400", 10.16 mm width) supplier device package for board-level integration where this footprint is required.
- Operating Range Specified for −40°C to 85°C ambient temperature (TA) for use in environments within this range.
- Memory Format Volatile SDRAM memory format intended for temporary system memory and buffering applications.
Typical Applications
- Embedded systems — External SDRAM storage for embedded designs that require a 128 Mbit parallel memory interface.
- Buffer memory — Frame or data buffering where 8M × 16 organization and 143 MHz clocking meet throughput needs.
- Board-level memory expansion — Drop-in DRAM option for designs using the 54-TSOP II package footprint and LVTTL signaling.
Unique Advantages
- Compact TSOP II footprint: The 54-TSOP II package (0.400", 10.16 mm) enables dense board-level placement while maintaining a standard supplier package.
- Measured performance: 143 MHz clocking combined with a 5.4 ns access time provides predictable timing for system memory operations.
- Standard LVTTL interface: Simplifies interfacing to TTL-compatible memory controllers and logic.
- Wide operating voltage range: 3.0 V to 3.6 V operation accommodates common 3 V DRAM power rails.
- Extended ambient temperature: Rated for −40°C to 85°C (TA) to support a range of environmental conditions within that span.
Why Choose IS42S16800J-7TLI-TR?
The IS42S16800J-7TLI-TR provides a straightforward SDRAM solution for designs requiring 128 Mbit of parallel DRAM with LVTTL signaling and a 54-TSOP II package. Its specified clock frequency, access time, and supply range make it suitable for systems that need predictable DRAM timing and compatibility with standard 3 V power rails.
This device is appropriate for engineers and procurement teams specifying board-level memory expansion or buffer memory in embedded and electronic systems operating within −40°C to 85°C. Selection of this device supports consistent performance and a known package footprint for integration into existing board layouts.
Request a quote or submit an inquiry for availability and pricing for the IS42S16800J-7TLI-TR to evaluate it for your next design.