IS42S32160A-75BLI-TR

The IS42S32160A-75BLI-TR is a 512‑Mbit synchronous DRAM organized as 4M × 32 bits across four internal banks. It implements a fully synchronous, pipelined architecture with a parallel interface and LVTTL signaling for system memory applications.

This device is targeted at designs requiring high memory bandwidth and programmable burst access modes, offering a range of burst lengths, CAS latencies, and internal refresh options to match system timing and throughput needs.

Key Features

• Memory Core Quad 4M × 32 organization (512‑Mbit total) with four internal banks for concurrent access sequencing.
• Synchronous SDRAM Architecture Fully synchronous operation with internal pipelined architecture; all inputs sampled on the rising edge of CLK.
• Performance Clock rate up to 133 MHz and access time of 6 ns; CAS# latency selectable at 2 or 3 cycles.
• Burst Control Programmable burst lengths of 1, 2, 4, 8 or full page and selectable burst type (interleaved or linear) with burst stop capability.
• Refresh and Power Management Supports Auto Refresh and Self Refresh; 8K refresh cycles/64 ms (8K/32 ms for industrial grade) and CKE-controlled power-down behavior.
• Byte Masking Individual byte control via DQM0–DQM3 for selective data masking during writes.
• Voltage Single supply operation at +3.3 V ±0.3 V (3.0–3.6 V).
• Interface Parallel memory interface with LVTTL signaling and standard SDRAM command set (BankActivate, Read, Write, Precharge).
• Package and Temperature 90‑ball LF‑BGA (8 × 13 mm) package; ball pitch 0.8 mm, ball size 0.45 mm; operating temperature −40 °C to +85 °C (TA). Pb‑free package option available.

Typical Applications

• High‑bandwidth systems Suited for systems that require sustained memory throughput where synchronous burst transfers and multi‑bank operation improve effective bandwidth.
• Industrial temperature applications The −40 °C to +85 °C operating range supports deployment in systems that operate across extended ambient conditions.
• Synchronous parallel memory designs Intended for designs using parallel SDRAM memory interfaces with LVTTL signaling and programmable burst/latency control.

Unique Advantages

• Flexible burst and latency configuration: Programmable burst lengths and CAS# latency (2 or 3) let system designers tune throughput versus latency for specific workloads.
• Multi‑bank architecture: Four internal banks (4M × 32 × 4) enable interleaved access patterns to improve continuous data transfer efficiency.
• Robust refresh and low‑power modes: Auto and Self Refresh plus CKE‑controlled power down provide straightforward methods to manage data integrity and standby power.
• Industry‑grade temperature support: Specified operation from −40 °C to +85 °C for applications requiring broader environmental range.
• Standard 3.3 V supply and LVTTL interface: Compatibility with common system voltage rails and logic levels simplifies integration into existing designs.
• Compact LF‑BGA package: 90‑ball LF‑BGA (8 × 13 mm) offers a high‑density physical footprint with available Pb‑free option.

Why Choose IS42S32160A-75BLI-TR?

The IS42S32160A-75BLI-TR combines a synchronous, pipelined SDRAM architecture with programmable burst modes and multi‑bank organization to support designs requiring predictable, sustained memory transfers. With a 133 MHz clock rate, selectable CAS latencies, and built‑in refresh/power‑down features, it provides configurable performance and power behavior for a range of system requirements.

Its LF‑BGA package, 3.0–3.6 V supply range, LVTTL interface, and support for industrial temperature operation make it suitable for embedded and high‑bandwidth applications where compact form factor and reliable operation across ambient conditions matter.

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