IS42S32160B-6TLI-TR

The IS42S32160B-6TLI-TR is a 512 Mbit synchronous DRAM organized as 16M × 32 with a quad-bank architecture (4M × 32 × 4 banks). It implements a fully synchronous, pipelined design with all signals referenced to the rising edge of the clock to support high-speed, low-latency burst transfers.

Designed for board-level memory subsystems, the device offers programmable burst lengths and CAS latency, Auto/ Self Refresh modes, and an LVTTL parallel interface. It operates from a single 3.3 V supply (3.0 V–3.6 V) and is available in an 86‑pin TSOP‑II package with an industrial operating temperature range.

Key Features

• Core / Memory Organization  512 Mbit SDRAM organized as 16M × 32 (4M × 32 × 4 banks) for parallel data transfers and internal bank interleaving.
• Clock & Performance  Supports clock frequency up to 166 MHz (CAS latency = 3) with access time from clock as low as 5.4 ns (CAS latency = 3) for fast burst reads.
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (Sequential / Interleave); CAS latency programmable to 2 or 3 clocks.
• Refresh & Power Management  Auto Refresh and Self Refresh supported; refresh rate options include 8K cycles per 16 ms (A2 grade) or 8K per 64 ms (Commercial/Industrial/A1 grades). Power-saving power-down mode supported.
• Interface  LVTTL-compatible parallel interface with random column address capability every clock cycle and burst termination options (burst stop and precharge).
• Electrical  Single power supply: 3.3 V ±0.3 V (specified supply range 3.0 V–3.6 V).
• Package & Temperature  Supplied in an 86-pin TSOP‑II (0.400", 10.16 mm width) package; specified operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems  Board-level parallel DRAM for systems requiring synchronous burst transfers and selectable CAS latency.
• Industrial control equipment  Suitable for designs operating across −40 °C to +85 °C that need robust refresh and self-refresh modes.
• High-speed buffering  Frame or data buffering where programmable burst lengths and bank interleaving reduce access latency during sustained transfers.
• Consumer and commercial electronics  Parallel DRAM integration for products that use a 3.3 V memory interface and require LVTTL signaling.

Unique Advantages

• Flexible performance tuning: Programmable CAS latency (2 or 3) and burst lengths let designers balance latency and throughput for specific workloads.
• Bank interleaving to hide precharge: Internal quad-bank architecture and interleave support reduce effective row-access penalty during burst operations.
• Robust refresh options: Multiple refresh timing options (8K cycles per 16 ms or 64 ms depending on grade) and self-refresh provide design flexibility for different system requirements.
• Industry-standard electrical interface: LVTTL parallel interface and single 3.3 V supply simplify integration into existing 3.3 V memory subsystems.
• Board-friendly package and temperature range: 86‑pin TSOP‑II package (10.16 mm width) with −40 °C to +85 °C operating range supports compact board designs and industrial environments.

Why Choose IS42S32160B-6TLI-TR?

The IS42S32160B-6TLI-TR delivers a synchronous, pipelined DRAM solution optimized for applications that require configurable burst behavior, selectable CAS latency, and predictable high-speed transfers up to 166 MHz. Its quad-bank organization and bank interleaving reduce effective access latency while refresh and self-refresh modes simplify power management in deployed systems.

This device is positioned for designers needing a 512 Mbit parallel SDRAM in an 86‑pin TSOP‑II package with a broad operating temperature range and standard LVTTL signaling. It provides a practical balance of performance, configuration flexibility, and board-level integration for memory subsystems in embedded and industrial designs.

Request a quote or contact sales to discuss availability, lead times, and how IS42S32160B-6TLI-TR can fit into your memory subsystem design.