IS42S32160B-75ETLI

IC DRAM 512MBIT PAR 86TSOP II
Part Description

IC DRAM 512MBIT PAR 86TSOP II

Quantity 772 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.5 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S32160B-75ETLI – IC DRAM 512MBIT PAR 86TSOP II

The IS42S32160B-75ETLI is a 512Mbit synchronous DRAM organized as 16M × 32 with a quad-bank architecture and a parallel LVTTL interface. It uses a pipelined synchronous architecture to support high-speed data transfer and programmable burst operations.

This device is intended for designs that require volatile SDRAM storage with a 3.0–3.6V supply, support for programmable CAS latency and burst sequencing, and industrial temperature operation to −40°C to +85°C.

Key Features

  • Memory Architecture  512 Mbit SDRAM organized as 16M × 32 and implemented as 4M × 32 × 4 banks for internal bank interleaving and efficient row handling.
  • Synchronous Pipeline Operation  Fully synchronous operation with all signals referenced to the rising edge of CLK to enable predictable timing and pipeline data transfer.
  • Clock and Timing  Clock frequency rating of 133 MHz and access time down to 5.5 ns (device timing options include programmable CAS latency 2 or 3 as specified in the datasheet).
  • Burst Control  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible throughput patterns.
  • Refresh and Power Modes  Supports Auto Refresh (CBR) and Self Refresh; refresh options per datasheet include 8192 refresh cycles with selectable refresh timing options.
  • Interface  LVTTL-compatible signals and a parallel memory interface for direct integration into synchronous memory subsystems.
  • Supply Voltage  Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), compatible with standard 3.3 V memory systems.
  • Package  86-pin TSOP II package (86-TFSOP, 0.400" / 10.16 mm width) optimized for surface-mount applications.
  • Operating Temperature  Industrial-range operation from −40°C to +85°C for use in temperature-demanding environments.

Typical Applications

  • Embedded memory subsystems  Used where high-speed, synchronous DRAM storage with programmable burst and CAS timing is required.
  • Industrial control systems  Suitable for systems that require operation across −40°C to +85°C and reliable refresh/self-refresh capabilities.
  • Network and communications equipment  Fits designs needing parallel SDRAM with low access times and bank interleaving to sustain data throughput.
  • High-performance buffering  Employed as a high-speed buffer or working memory where 512 Mbit capacity and 133 MHz clock operation are needed.

Unique Advantages

  • Synchronous pipeline architecture: Enables consistent, clock-referenced data flow and predictable timing for system design.
  • Flexible burst and CAS control: Programmable burst length and sequence plus selectable CAS latency allow tuning for throughput or latency needs.
  • Quad-bank organization: Four internal banks provide the ability to hide row precharge time and support interleaved accesses for higher effective bandwidth.
  • Industrial temperature range: −40°C to +85°C operation supports deployment in temperature-challenging environments.
  • Standard 3.3 V supply range: 3.0–3.6 V operation ensures compatibility with common 3.3 V memory systems.
  • Industry-standard TSOP II package: 86-pin TSOP-II package provides a compact surface-mount footprint for board-level integration.

Why Choose IS42S32160B-75ETLI?

The IS42S32160B-75ETLI delivers a 512 Mbit synchronous DRAM solution with programmable timing and burst features, a quad-bank architecture for internal interleaving, and LVTTL-compatible parallel interface—all in an 86-pin TSOP-II package. Its combination of 133 MHz rated operation, low access time, and flexible refresh modes makes it suitable for systems that require predictable, high-speed volatile memory behavior.

This device is well suited to engineers and procurement teams specifying SDRAM for embedded, industrial, and communication designs where 3.3 V supply compatibility, industrial temperature operation, and selectable timing/burst options are required. The device’s feature set supports scalable system integration and reliable runtime refresh control for sustained operation.

Request a quote or submit a procurement inquiry for IS42S32160B-75ETLI to receive pricing and availability information.

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