IS42S32160B-75EBLI

The IS42S32160B-75EBLI is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with a parallel interface and quad-bank architecture. It implements a pipelined, fully synchronous interface with registered inputs and outputs for high-speed system memory applications.

This device targets 3.3 V memory systems and supports a 3.0–3.6 V supply range, programmable burst operation and CAS latency options, making it suitable for designs requiring deterministic synchronous DRAM behavior and compact BGA mounting.

Key Features

• Memory Core  512 Mbit SDRAM organized as 16M × 32 with internal quad-bank configuration (4M × 32 × 4 banks) for bank interleaving and row/precharge hiding.
• Synchronous SDRAM Performance  Fully synchronous operation with inputs/outputs referenced to the rising clock edge; typical clock support for this device is 133 MHz with an access time of 5.5 ns.
• Programmable Burst and Latency  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), with CAS latency options of 2 or 3 clocks for timing flexibility.
• Refresh and Power Management  Auto Refresh and Self Refresh supported; refresh cycles per datasheet include 8192 refresh cycles with selectable timing options (16 ms or 64 ms depending on grade).
• Interface and Logic Levels  LVTTL-compatible interface signaling for address/control and data paths.
• Power  Single power supply operation centered at 3.3 V (specified supply range 3.0–3.6 V).
• Package and Mounting  90-ball W-BGA package (11 × 13 mm footprint) / 90-TFBGA mounting style for compact board-level integration.
• Operating Temperature  Rated for operation from –40°C to +85°C (TA), supporting industrial temperature applications.

Typical Applications

• Memory subsystems  Used as synchronous parallel DRAM in 3.3 V memory system designs requiring a 512 Mbit density and quad-bank architecture.
• Board-level SDRAM integration  Compact 90-ball WBGA package suitable for designs where board space and high-density memory are required.
• Industrial temperature systems  Operation to –40°C supports deployment in industrial environments that require extended temperature range.

Unique Advantages

• Flexible timing configuration:  Programmable CAS latency and burst length/sequence allow tuning for system timing and throughput requirements.
• Quad-bank architecture:  Internal banking supports interleaving to hide row precharge and improve effective data throughput during bursts.
• Single-supply operation:  3.3 V supply (3.0–3.6 V supported) simplifies power-rail design in standard memory systems.
• Compact BGA footprint:  90-ball WBGA (11 × 13 mm) reduces PCB area for high-density memory implementations.
• On-chip refresh and low-power modes:  Auto Refresh and Self Refresh capabilities assist in power management and data retention during low-activity periods.
• Industrial temperature rating:  –40°C to +85°C operating range broadens suitability for temperature-demanding applications.

Why Choose IS42S32160B-75EBLI?

The IS42S32160B-75EBLI delivers a compact, fully synchronous 512 Mbit DRAM solution with programmable latency and burst features, a 16M × 32 memory organization and quad-bank architecture for improved throughput. Its 3.3 V single-supply design, LVTTL interface and 90-ball WBGA package make it suitable for designers integrating high-density SDRAM into constrained board layouts requiring industrial temperature operation.

Choose this device when your design requires verified SDRAM timing options, on-chip refresh modes, and a small-package parallel DRAM component for reliable system memory implementation.

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