IS42S32160B-75EBLI-TR

The IS42S32160B-75EBLI-TR is a 512Mbit synchronous DRAM organized as 16M × 32 with a quad-bank, pipeline architecture. It is a fully synchronous parallel DRAM designed for 3.3V memory systems with LVTTL-compatible signaling and all I/O registered to the rising edge of the clock.

Targeted at systems that require high-speed burst transfers and flexible memory timing, the device provides programmable burst length and sequence, internal bank interleaving to hide row-access/precharge latency, and support for Auto Refresh and Self Refresh modes for system memory management.

Key Features

• Core & architecture  Quad-bank synchronous DRAM with internal bank interleaving and pipeline architecture; all inputs and outputs are referenced to the positive clock edge.
• Memory organization & capacity  512 Mbit capacity organized as 16M × 32 (4M × 32 × 4 banks), providing 134,217,728-bit banks configured as 8,192 rows × 512 columns × 32 bits.
• Performance & timing  Supports programmable CAS latency (2 or 3 clocks). The -75E grade operates at 133 MHz with an access time from clock of 5.5 ns (CAS latency = 2).
• Burst and sequencing  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh and power modes  Auto Refresh (CBR) and Self Refresh supported; refresh cycles documented (8192 refresh cycles over specified intervals depending on grade).
• Voltage & signaling  Single power supply operation at 3.3 V ±0.3 V (3.0 V to 3.6 V) with LVTTL-compatible interface.
• Package & temperature  90-ball W‑BGA (11 × 13 mm) package; specified operating temperature range for this product: −40°C to +85°C (TA).

Typical Applications

• 3.3 V synchronous memory systems  Acts as a parallel SDRAM device for systems designed around a 3.3 V memory bus and LVTTL signaling, where synchronous burst transfers are required.
• High-throughput buffering  Suitable for designs that require burst data streaming and random column access every clock cycle using programmable burst lengths and sequences.
• Temperature-critical embedded designs  Usable in applications that need operation across −40°C to +85°C ambient conditions while maintaining synchronous DRAM functionality.

Unique Advantages

• Flexible timing configuration  Programmable CAS latency (2 or 3) and multiple burst length/sequence options allow designers to match memory timing to system requirements.
• Quad-bank interleaving  Internal bank architecture hides row precharge time and enables interleaved access patterns to improve effective throughput during burst operations.
• High-speed synchronous operation  The -75E device variant supports 133 MHz operation with a 5.5 ns access time from clock, enabling fast, predictable data transfers.
• Standard power and signaling  Single 3.3 V supply range (3.0–3.6 V) and LVTTL interface simplify integration with common 3.3 V system designs.
• Compact WBGA packaging  90-ball W‑BGA (11 × 13 mm) offers a small footprint for space-constrained board layouts while providing the required pin count for a 32-bit data interface.

Why Choose IC DRAM 512MBIT PARALLEL 90WBGA?

The IS42S32160B-75EBLI-TR provides a synchronous, quad‑bank 512 Mbit DRAM solution that balances high-speed burst capability with flexible timing and refresh options. Its support for programmable burst lengths, CAS latencies, and LVTTL signaling makes it suitable for 3.3 V systems that require deterministic, clocked memory behavior.

With a compact 90-ball W‑BGA package and an extended operating temperature range of −40°C to +85°C, this device is appropriate for designs needing a reliable, high-throughput parallel DRAM component while maintaining a small PCB footprint and standard power interface.

Request a quote or submit a product inquiry to obtain pricing and lead-time information for the IS42S32160B-75EBLI-TR.