IS42S32160B-75TL

The IS42S32160B-75TL is a 512 Mbit synchronous DRAM organized as 16M x 32 with four internal banks (4M x 32 × 4 banks). It implements a fully synchronous, pipelined architecture with registered inputs on the clock’s positive edge for predictable, high-bandwidth memory access.

Designed for applications that require burst transfers and high memory bandwidth, the device supports programmable burst lengths and CAS latencies to match system performance and timing requirements while operating from a single +3.3 V supply.

Key Features

• Core / Memory Architecture Quad-bank organization: 4M × 32 bits per bank (overall 16M × 32), totaling 512 Mbit of SDRAM capacity.
• Performance Supports clock rates including 133 MHz (device option set) and CAS latencies of 2 or 3. Access time from clock is 5.4–5.5 ns depending on configuration.
• Burst and Mode Control Programmable burst lengths of 1, 2, 4, 8 or full page with interleaved or linear burst type and burst stop function. Mode register programmable for system tuning.
• Refresh and Reliability Auto Refresh and Self Refresh supported with 8K refresh cycles per 64 ms (15.6 μs/row) to maintain data integrity across active use and low-power intervals.
• Interface Parallel SDRAM interface with LVTTL signaling. Individual byte control via DQM0–DQM3 for selective masking.
• Power Single-supply operation at 3.0 V to 3.6 V (specified as +3.3 V ±0.3 V in datasheet).
• Package & Temperature Range Available in 86-pin TSOP-II (0.5 mm pin pitch, 10.16 mm width) package. Commercial temperature range: 0 °C to +70 °C.

Typical Applications

• High-bandwidth systems — Memory subsystem for designs that require sustained burst transfers and predictable synchronous timing.
• Embedded modules — Compact TSOP-II package and single 3.3 V supply make it suitable for space-constrained embedded memory implementations.
• Data buffering and streaming — Programmable burst lengths and byte masking enable efficient buffering for continuous data flows.

Unique Advantages

• High-density memory in a compact package: 512 Mbit implemented as 16M × 32 across four banks, fitting high capacity into an 86-pin TSOP-II footprint.
• Flexible performance tuning: Selectable CAS latency (2 or 3) and programmable mode register let designers balance latency and clock rate for their system.
• Burst and byte-level control: Multiple burst lengths, burst type options, and DQM-controlled bytes enable efficient, application-specific data transfers.
• Standard single-supply operation: Operates from a +3.3 V supply (3.0–3.6 V range), simplifying power rail design in typical digital systems.
• Robust refresh support: Auto and Self Refresh with defined 8K/64 ms refresh cycles provide predictable data retention management.

Why Choose IS42S32160B-75TL?

The IS42S32160B-75TL delivers a predictable, synchronous DRAM solution with programmable burst behavior and selectable timing modes to match system requirements. Its quad-bank organization and 512 Mbit density provide ample bandwidth for designs that need sustained, burst-oriented memory access.

This device suits designers seeking a compact TSOP-II packaged SDRAM operating from a single 3.3 V supply with comprehensive refresh and byte-control features. The combination of configurable performance, standard interface signaling, and commercial temperature rating supports integration into a wide range of high-bandwidth embedded applications.

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