IS42S32160B-75TLI-TR

The IS42S32160B-75TLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with four internal banks. It implements a fully synchronous, internally pipelined architecture with a parallel memory interface and LVTTL signaling.

Designed for applications requiring high memory bandwidth, this device delivers programmable burst operation, selectable CAS latency, and standard refresh modes while operating from a single 3.3 V±0.3 V supply in a compact 86-pin TSOP-II package and an industrial temperature option.

Key Features

• Core / Architecture  Quad-bank SDRAM organized as 4M × 32 × 4 banks (16M × 32 total) with an internal pipelined architecture for synchronous read/write operation.
• Memory Organization & Capacity  512 Mbit total capacity, configured as 16M × 32 with four internal banks and row/column addressing.
• Performance / Timing  Supports clock rates up to 133 MHz with access times around 5.5 ns and selectable CAS latency of 2 or 3 to match system timing requirements.
• Burst & Mode Control  Programmable burst lengths (1, 2, 4, 8, or full page), burst type (interleaved or linear), and a programmable mode register for flexible system integration.
• Refresh & Power Management  Auto and self-refresh modes with 8K refresh cycles per 64 ms (≈15.6 μs/row) to maintain data integrity; single +3.3 V ±0.3 V supply (3.0–3.6 V).
• Byte Masking & Data Control  Individual byte control via DQM0–DQM3 and burst stop functionality for fine-grained data handling.
• Interface  Parallel SDRAM interface with LVTTL signaling compatible with standard synchronous memory controllers.
• Package & Temperature  Supplied in an 86‑pin TSOP‑II (0.5 mm pitch) package (86‑TFSOP, 0.400" / 10.16 mm width) and specified operating temperature range of −40 °C to +85 °C.

Typical Applications

• High‑bandwidth memory subsystems  Use where sustained data throughput is required and a parallel SDRAM interface is appropriate.
• Industrial systems  Systems that require operation across −40 °C to +85 °C benefit from the device's industrial temperature range.
• 3.3 V parallel memory designs  Integrates into designs using a single +3.3 V ±0.3 V supply with LVTTL signaling and standard SDRAM control.

Unique Advantages

• Quad‑bank architecture: Four internal banks (4M × 32 each) enable concurrent bank operations and improve effective throughput for burst sequences.
• Flexible burst and latency options: Selectable CAS latency (2 or 3) and programmable burst lengths/types let designers tune latency and bandwidth to system needs.
• Standardized power and interface: Single +3.3 V ±0.3 V supply and LVTTL interface simplify integration with common memory controllers.
• Robust refresh support: Auto and self‑refresh modes plus 8K refresh cycles per 64 ms reduce host refresh overhead while preserving data integrity.
• Industrial temperature availability: −40 °C to +85 °C operating range supports deployments in elevated-temperature environments.
• Compact TSOP‑II packaging: 86‑pin TSOP‑II form factor (0.400" / 10.16 mm width) provides a small-footprint option for board-level density.

Why Choose IC DRAM 512MBIT PAR 86TSOP II?

The IS42S32160B-75TLI-TR provides a straightforward, high-bandwidth SDRAM solution for systems that require 512 Mbit capacity with flexible burst programming, selectable CAS latency, and standard LVTTL parallel interfacing. Its quad‑bank organization and internal pipelined architecture support efficient burst transfers and high sustained throughput.

This device is well suited for designers needing a 3.3 V parallel SDRAM in a compact 86‑pin TSOP‑II package and offers options for industrial temperature operation. The programmable mode register, auto/self refresh, and byte-level data control simplify system integration and timing optimization.

If you need pricing or availability for IS42S32160B-75TLI-TR, request a quote or submit an inquiry to receive a formal quotation and lead-time information.