IS42S32160B-7BLI-TR

The IS42S32160B-7BLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 16M × 32 with an internal quad-bank architecture. It provides pipelined, fully synchronous parallel memory access with programmable burst and CAS latency options for high-speed system buffering and data storage.

Designed for systems requiring a 3.3 V single-supply SDRAM solution with a 90‑ball LFBGA (13 × 11) package and an operating range of −40°C to 85°C, this device targets applications that need deterministic, clocked memory performance with refresh and power-saving modes.

Key Features

• Core / Memory Organization 512 Mbit SDRAM organized as 16M × 32 and internally as 4M × 32 × 4 banks for bank interleaving and efficient row/column operation.
• Clocked, Fully Synchronous Operation All signals referenced to the positive clock edge; specified for a 143 MHz clock frequency on the -7 variant to support high data-rate burst transfers.
• Programmable Burst and CAS Supports programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave) with CAS latency options of 2 or 3 clocks.
• Performance Timing Access time from clock of 5.4 ns (CAS latency = 3) and random column address capability each clock cycle for continuous data flow during bursts.
• Refresh and Power Management Auto Refresh (CBR) and Self Refresh supported; refresh cycle counts documented (8,192 refresh cycles with A2 grade timing at 16 ms or commercial/industrial/A1 timing at 64 ms).
• Interface and Signaling LVTTL-compatible inputs/outputs and a parallel memory interface for integration into standard SDRAM memory controllers.
• Power Supply Single power supply operation at 3.3 V ±0.3 V (3.0 V to 3.6 V).
• Package and Temperature 90‑LFBGA (13 × 11) package; specified operating temperature range −40°C to 85°C (TA).

Typical Applications

• Parallel SDRAM memory expansion Provides 512 Mbit of volatile storage for systems that require synchronous, predictable parallel memory access.
• High-rate data buffering Used where burst transfers and random column access per clock are needed to sustain throughput during streaming or burst-oriented workloads.
• Embedded systems operating across temperature Suited for designs that require an SDRAM device with an industrial temperature range (−40°C to 85°C) and standard 3.3 V supply.

Unique Advantages

• Deterministic, clocked operation: Fully synchronous design with all signals referenced to the positive clock edge simplifies timing in clocked memory systems.
• Flexible burst control: Programmable burst lengths and sequences with programmable CAS latency enable tuning for throughput or latency in burst transfers.
• Quad-bank architecture: Internal banks and bank interleaving hide row access/precharge time to improve effective throughput during interleaved accesses.
• Robust refresh options: Auto and self-refresh modes with specified refresh counts provide predictable data retention and power management behavior.
• Standard power and signaling: 3.3 V single-supply operation and LVTTL-compatible I/O ease integration with common SDRAM controllers and legacy interfaces.
• Compact BGA package: 90‑ball LFBGA (13 × 11) enables high-density PCB layouts where board space is constrained.

Why Choose IS42S32160B-7BLI-TR?

The IS42S32160B-7BLI-TR combines a 512 Mbit SDRAM density with fully synchronous, pipelined architecture and programmable timing controls to meet designs that require predictable, high-rate parallel memory. Its quad-bank organization and support for burst/interleaved transfers help maximize sustained throughput in burst-oriented workloads.

This device is appropriate for engineers specifying a 3.3 V SDRAM with industrial temperature capability and a compact 90‑LFBGA footprint, offering configurable latency and refresh behaviors to match system timing and power requirements.

Request a quote or submit an inquiry to discuss availability, pricing, and lead times for the IS42S32160B-7BLI-TR.