IS42S32160B-7BL-TR

The IS42S32160B-7BL-TR is a 512Mbit synchronous DRAM device organized as 16M × 32 with an internal quad-bank architecture. It is a fully synchronous parallel SDRAM designed for 3.3V memory systems and optimized for high-speed, pipelined data transfers referenced to the rising edge of the clock.

This device is suited for systems requiring a parallel SDRAM solution with programmable burst control, selectable CAS latency, and support for auto- and self-refresh modes. It is offered in a compact 90-ball LFBGA (13 × 11) package and rated for commercial operation (0°C to +70°C).

Key Features

• Core / Memory Organization 512Mbit SDRAM organized as 16M × 32 (internally configured as 4M × 32 × 4 banks), enabling bank interleaving and hidden row access/precharge.
• Performance Rated for a 143 MHz clock frequency for the -7 speed grade (device family also supports 166 MHz variants); typical access time from clock is 5.4 ns at CAS latency = 3.
• Programmable Burst & CAS Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (Sequential/Interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh & Power Modes Auto Refresh and Self Refresh supported. Refresh options include 8,192 cycles per 16 ms (A2 grade) or per 64 ms (Commercial/Industrial/A1 grades) as specified in device options.
• Interface LVTTL-compatible I/O with fully synchronous signaling referenced to the positive clock edge; supports random column address every clock cycle during burst access.
• Power Single power supply, nominal 3.3 V with an allowed range of 3.0 V to 3.6 V.
• Package & Temperature 90-LFBGA (13 × 11) supplier device package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Synchronous memory subsystems — Provides a 512Mbit parallel SDRAM option for systems that require pipelined, clocked DRAM with programmable burst modes.
• Embedded systems — Compact 90-ball LFBGA package and 3.3V supply make it suitable for space-constrained, board-level memory designs operating within the commercial temperature range.
• High-speed buffering — Quad-bank organization and random column addressing every clock enable efficient burst transfers and bank interleaving for buffering and streaming data.

Unique Advantages

• Quad-bank architecture for hidden precharge Internal bank structure hides row access and precharge time to improve sustained burst throughput.
• Flexible timing and bursting Programmable CAS latency (2 or 3 clocks) and multiple burst-length options allow tuning for system timing and throughput requirements.
• Comprehensive refresh options Supports Auto Refresh and Self Refresh with defined refresh-cycle options (8,192 cycles per 16 ms or 64 ms depending on grade) to match system power and data-retention needs.
• Industry-standard LVTTL synchronous interface All signals referenced to the rising clock edge simplify integration into LVTTL-based memory controllers.
• Wide supply tolerance Operates across a 3.0 V to 3.6 V supply range to accommodate typical 3.3 V system rails.
• Compact BGA footprint 90-LFBGA (13 × 11) package delivers high-density memory in a board-friendly form factor.

Why Choose IS42S32160B-7BL-TR?

The IS42S32160B-7BL-TR provides a synchronous, parallel 512Mbit DRAM option that combines configurable burst behavior, selectable CAS latency, and bank interleaving to support high-speed, pipelined memory access. Its LVTTL interface, single 3.3 V supply range, and compact 90-LFBGA package make it a practical choice for commercial-temperature memory subsystems requiring predictable timing and refresh management.

This device is appropriate for designers and procurement teams targeting reliable SDRAM capacity with explicit timing controls and refresh modes, offering straightforward integration into 3.3 V synchronous memory designs.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the IS42S32160B-7BL-TR.