IS42S32160B-6BLI-TR

The IS42S32160B-6BLI-TR is a 512Mbit synchronous DRAM organized as 16M × 32 with a quad-bank architecture and synchronous, pipelined interface. It delivers high-speed, low-latency burst transfers with programmable burst length and sequence, and all signals referenced to the rising edge of the clock.

Designed for systems requiring high-rate parallel DRAM, the device supports up to 166 MHz operation, single 3.3V supply operation, LVTTL signaling, and a compact 90-ball W‑BGA (11×13) package for space-constrained board designs.

Key Features

• Memory Core  512Mbit SDRAM organized as 16M × 32 with 4 internal banks (4M × 32 × 4 banks) for interleaved access and improved throughput.
• High-Speed Operation  Supports clock frequencies up to 166 MHz (CAS latency = 3) with an access time from clock of 5.4 ns at CAS‑3.
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); CAS latency selectable at 2 or 3 clocks.
• Refresh and Power Modes  Auto Refresh and Self Refresh supported; refresh cycles: 8192 cycles with timing options (16 ms for A2 grade or 64 ms for Commercial/Industrial/A1 grades as specified).
• Interface and Signaling  Fully synchronous LVTTL-compatible interface with random column address capability every clock cycle and burst read/write operations.
• Power  Single power supply: 3.3V ± 0.3V (3.0V–3.6V specified voltage range).
• Package and Mounting  90-ball W‑BGA (90-TFBGA / 11×13 mm) package for high-density mounting.
• Temperature Range  Specified operating temperature range: −40°C to +85°C (TA) for Industrial grade.
• Access and Bank Management  Internal bank architecture hides row access/precharge and supports self-timed row precharge and burst termination via commands.

Typical Applications

• High-speed data buffering  Use as synchronous DRAM for burst-oriented data buffering where pipeline access and bank interleaving reduce latency.
• Memory subsystems  Integration into parallel memory interfaces requiring 512Mbit SDRAM organized as 16M × 32 with programmable burst behavior.
• Embedded system memory  Suitable for embedded designs needing LVTTL-compatible synchronous DRAM and single 3.3V supply operation.

Unique Advantages

• High throughput at 166 MHz: Supports CAS latency = 3 operation at 166 MHz for high-rate synchronous transfers.
• Flexible burst control: Programmable burst lengths and sequential/interleaved burst sequencing allow tailoring of transfers to system access patterns.
• Low-latency access: 5.4 ns access time from clock (CAS‑3) enables fast data retrieval in time-sensitive designs.
• Robust refresh options: Supports Auto Refresh and Self Refresh with configurable refresh timing (8K cycles per specified interval) for varying grade requirements.
• Compact BGA footprint: 90-ball W‑BGA (11×13 mm) provides a small PCB area while supporting high pin density.
• Single-supply simplicity: Operates from a single 3.3V ± 0.3V supply, simplifying power-rail design.

Why Choose IS42S32160B-6BLI-TR?

The IS42S32160B-6BLI-TR combines a quad‑bank SDRAM architecture, programmable burst behavior, and synchronous LVTTL signaling to deliver repeatable, high-speed parallel memory performance. Its 512Mbit density (16M × 32), support for up to 166 MHz operation, and low access time make it suitable for designs that require predictable burst transfers and bank interleaving.

With single-supply 3.3V operation, support for Auto and Self Refresh, and a compact 90-ball W‑BGA package rated for −40°C to +85°C, this device is appropriate for engineers specifying space-efficient, high-throughput DRAM in industrial and embedded applications where the provided timing and refresh options match system requirements.

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