IS42S32160D-7BLI

The IS42S32160D-7BLI is a 512 Mbit synchronous DRAM organized as 16M × 32 with a parallel memory interface. It implements a fully synchronous, pipelined architecture designed for high-speed data transfer with programmable burst operation and programmable CAS latency.

Targeted for systems that require compact, high-density parallel SDRAM, this device delivers deterministic timing, selectable burst sequences, and operating range suitable for industrial-temperature designs.

Key Features

• Memory Core  512 Mbit SDRAM organized as 16M × 32 with internal bank architecture for hiding row access/precharge and support for 4 internal banks.
• Performance  Designed for a clock frequency of 143 MHz (–7 timing) with an access time from clock of 5.4 ns and programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave) with burst read/write and burst read/single write capabilities.
• Refresh and Self-Management  Auto-refresh and self-refresh support with 8K refresh cycles every 64 ms to maintain data integrity.
• Interface  LVTTL-compatible interface with random column addressing every clock cycle and support for burst termination by burst stop and precharge commands.
• Power  Voltage supply range specified at 3.0 V–3.6 V for this product variant.
• Package & Temperature  90-ball thin-profile FBGA package (90-TFBGA, 8 × 13); operating temperature range of −40 °C to +85 °C (TA).
• Standards & Timing  Fully synchronous operation with all signals referenced to the rising clock edge and support for random column address every clock cycle.

Typical Applications

• Embedded memory subsystems  As on-board parallel SDRAM for systems requiring 512 Mbit of volatile storage with predictable synchronous timing.
• High-speed buffering  For designs that need burst read/write buffering and low-latency access at a 143 MHz clock rate.
• Industrial electronics  Systems operating across −40 °C to +85 °C that require a compact 90-TFBGA memory package and robust refresh management.

Unique Advantages

• Configurable performance: Programmable CAS latency (2, 3) and multiple burst lengths let designers tune latency and throughput to application needs.
• Deterministic synchronous operation: All signals referenced to the positive clock edge simplify timing closure in synchronous memory systems.
• Integrated refresh support: Auto-refresh and self-refresh with 8K/64 ms refresh cycles reduce external refresh management burden.
• Industrial temperature support: Specified operation from −40 °C to +85 °C supports deployment in temperature-variable environments.
• Compact high-density package: 90-ball TF-BGA (8 × 13) provides a small footprint for high-density board designs.

Why Choose IS42S32160D-7BLI?

The IS42S32160D-7BLI positions itself as a compact, configurable 512 Mbit parallel SDRAM solution that balances high-speed synchronous operation with flexible burst and latency options. Its 16M × 32 organization, 143 MHz timing, and integrated refresh/self-refresh features make it suitable for designers who need predictable memory timing and on-die refresh management in constrained board space.

This device is well-suited to development teams and procurement professionals building embedded systems, buffering engines, or industrial electronics that require a reliable, high-density SDRAM with a robust operating temperature range and TF-BGA packaging.

Request a quote or submit an inquiry for IS42S32160D-7BLI to obtain pricing, lead time, and availability information for your design or production needs.