 | | IS42S32160F-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 8 | |
 | | IS42S32160F-75EBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,384 | |
 | | IS42S32160F-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,365 | |
 | | IS42S32160F-75ETL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 299 | |
 | | IS42S32160F-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,099 | |
 | | IS42S32160F-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 902 | |
 | | IS42S32160F-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,337 | |
 | | IS42S32160F-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,926 | |
 | | IS42S32160F-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 286 | |
 | | IS42S32160F-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,039 | |
 | | IS42S32160F-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 807 | |
 | | IS42S32160F-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,337 | |
 | | IS42S32160F-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 911 | |
 | | IS42S32160F-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,326 | |
 | | IS42S32160F-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 401 | |
 | | IS42S32200C1-55T | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,066 | |
 | | IS42S32200C1-55T-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,760 | |
 | | IS42S32200C1-55TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 239 | |
 | | IS42S32200C1-55TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,057 | |
 | | IS42S32200C1-6T | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 613 | |