 | | IS42S32200E-5TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 876 | |
 | | IS42S32200E-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,727 | |
 | | IS42S32200E-6B | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,129 | |
 | | IS42S32200E-6B-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 988 | |
 | | IS42S32200E-6BI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 328 | |
 | | IS42S32200E-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 875 | |
 | | IS42S32200E-6BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 999 | |
 | | IS42S32200E-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 687 | |
 | | IS42S32200E-6BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,216 | |
 | | IS42S32200E-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,355 | |
 | | IS42S32200E-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,345 | |
 | | IS42S32200E-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 996 | |
 | | IS42S32200E-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 728 | |
 | | IS42S32200E-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,307 | |
 | | IS42S32200E-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 270 | |
 | | IS42S32200E-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,200 | |
 | | IS42S32200E-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 101 | |
 | | IS42S32200E-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,880 | |
 | | IS42S32200E-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 677 | |
 | | IS42S32200E-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 671 | |