 | | IS42S16320B-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 343 | |
 | | IS42S16320B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,655 | |
 | | IS42S16320B-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 493 | |
 | | IS42S16320B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 529 | |
 | | IS42S16320B-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 434 | |
 | | IS42S16320B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 180 | |
 | | IS42S16320B-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,032 | |
 | | IS42S16320B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 276 | |
 | | IS42S16320B-75ETL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 69 | |
 | | IS42S16320B-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 579 | |
 | | IS42S16320B-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,225 | |
 | | IS42S16320B-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,611 | |
 | | IS42S16320B-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 261 | |
 | | IS42S16320B-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 817 | |
 | | IS42S16320B-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 646 | |
 | | IS42S16320B-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 154 | |
 | | IS42S16320B-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 649 | |
 | | IS42S16320B-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,114 | |
 | | IS42S16320B-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 439 | |
 | | IS42S16320B-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,641 | |