IS42S32200E-5TL-TR

The IS42S32200E-5TL-TR is a 64-Mbit synchronous DRAM (SDRAM) organized as 524,288 × 32 × 4 banks and designed for 3.3 V memory systems. It uses a fully synchronous pipeline architecture and a parallel memory interface to support high-speed data transfer and predictable timing in system memory applications.

This device targets designs that require compact, board-level DRAM in an 86‑TSOP II package with programmable burst modes, selectable CAS latency, and industry-standard LVTTL signaling.

Key Features

• Memory Architecture Quad-bank SDRAM organized as 524,288 × 32 × 4 banks (2,048 rows × 256 columns × 32 bits per bank) delivering 64 Mbit total capacity.
• High-speed Synchronous Operation Fully synchronous design with pipeline architecture and clock-frequency support up to 200 MHz (CL=3) for deterministic timing.
• Programmable Burst and CAS Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave), plus selectable CAS latency of 2 or 3 clocks.
• Refresh and Self-Refresh Supports AUTO REFRESH and self-refresh modes. Commercial grade refresh timing: 4096 refresh cycles every 64 ms.
• Interface and Signaling LVTTL-compatible interface with parallel memory access and random column address capability every clock cycle.
• Power and Timing Single 3.3 V power supply operation (3.15 V to 3.45 V range) with access times down to 5 ns (CL=3) and programmable performance options.
• Package Supplied in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package for compact board designs.
• Burst Termination and Bank Management Internal bank architecture for row access/precharge hiding and support for burst termination by burst stop and precharge commands.

Typical Applications

• 3.3 V Memory Subsystems Acts as a board-level synchronous DRAM component in 3.3 V system memory designs.
• Embedded Systems Provides compact, synchronous DRAM capacity where pipeline timing and burst modes improve data throughput.
• Data Buffering and Throughput-Critical Modules Supports high-rate read/write bursts and random column access every clock cycle for buffering tasks.

Unique Advantages

• Programmable Performance: Selectable CAS latency (2 or 3) and multiple burst lengths enable tuning for latency or throughput depending on system needs.
• Deterministic Timing: Fully synchronous operation referenced to the rising clock edge and pipeline architecture provide predictable timing for system designers.
• Compact Board Footprint: 86‑TSOP II package (10.16 mm width) offers a space-efficient form factor for dense PCB layouts.
• Robust Refresh Handling: Supports AUTO REFRESH and self-refresh modes with commercial-grade refresh timing for reliable data retention in typical operating conditions.
• Standard Interface: LVTTL signaling and parallel interface simplify integration with existing 3.3 V memory controllers and logic.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS42S32200E-5TL-TR provides a compact, synchronous 64 Mbit DRAM solution with flexible burst and latency options, making it suitable for designs that require predictable, high-speed parallel memory. Its single 3.3 V supply, LVTTL interface, and 86‑TSOP II package support straightforward integration into board-level memory subsystems.

This device is well suited to engineers and procurement teams seeking a proven SDRAM element for embedded systems, buffering modules, and other applications where configurable performance and a compact package are important.

Request a quote or submit an inquiry for IS42S32200E-5TL-TR to check availability, lead times, and pricing for your design requirements.