IS42S32200E-5TL

The IS42S32200E-5TL is a 64 Mbit synchronous DRAM organized as 2M × 32 with a parallel memory interface and quad-bank architecture. It is designed for commercial-temperature 3.3 V memory systems and supports synchronous, pipelined data transfers referenced to the rising clock edge.

Targets include commercial embedded systems and memory-buffering applications that require configurable burst operations, predictable access timing, and an 86-pin TSOP-II footprint for compact board-level integration.

Key Features

• Core / Architecture  Quad-bank synchronous DRAM organized as 524,288 bits × 32 × 4 banks (64 Mbit) for pipelined read/write operations.
• Memory Organization & Size  2M × 32 organization delivering 64 Mbit of volatile SDRAM storage.
• Performance & Timing  Supports clock frequencies up to 200 MHz (–5 speed grade) with access time as low as 5 ns and programmable CAS latency (2 or 3 clocks).
• Burst & Sequence Control  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) for flexible data transfer patterns.
• Refresh & Power  Single 3.3 V power supply operation (3.15 V to 3.45 V) with self-refresh modes; supports 4096 refresh cycles per specified interval depending on grade.
• Interface  LVTTL-compatible parallel interface with random column address capability every clock cycle for high-rate column access.
• Package & Mounting  86-pin TSOP-II (86-TFSOP, 0.400"/10.16 mm width) package optimized for surface-mount board designs.
• Operating Range  Commercial operating temperature range of 0°C to +70°C (TA).

Typical Applications

• Commercial embedded systems  Provides compact, synchronous DRAM capacity for control and buffering in commercial electronics operating at 0°C to +70°C.
• Memory buffering and frame storage  Parallel interface and programmable burst modes enable deterministic burst read/write sequences for buffering tasks.
• Compact board-level designs  86-pin TSOP-II package allows integration into space-constrained PCBs where a 3.3 V SDRAM solution is required.

Unique Advantages

• Predictable timing performance: 200 MHz clock support and access times down to 5 ns with selectable CAS latency enable repeatable timing behavior for synchronous designs.
• Flexible burst control: Programmable burst length and sequence provide design flexibility to match a range of data-transfer patterns and system requirements.
• Single-supply operation: Operates from a 3.3 V rail (3.15 V–3.45 V), simplifying power-rail requirements in standard commercial designs.
• Compact surface-mount package: The 86-TSOP II footprint supports high-density placement on space-limited PCBs without sacrificing memory capacity.
• Self-refresh capability: Built-in self-refresh modes reduce external refresh management overhead in low-activity or low-power scenarios.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS42S32200E-5TL delivers a synchronous, quad-bank 64 Mbit SDRAM option with configurable burst behavior, tight timing control, and a compact 86-pin TSOP-II package. Its 3.3 V single-supply operation and commercial temperature rating make it suitable for a wide range of commercial embedded designs that need predictable synchronous memory performance.

This device is documented with detailed timing and functional specifications to support system-level integration and validation, making it appropriate for engineers seeking a field-proven SDRAM building block from ISSI.

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