IS42S32200E-6B-TR

The IS42S32200E-6B-TR is a 64Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a quad-bank architecture and a parallel memory interface. Designed for 3.3V system operation, this part provides synchronous, clock-referenced access and features programmable burst modes and selectable CAS latency for deterministic memory timing.

Key Features

• Core Architecture  Quad-bank synchronous DRAM with all signals referenced to the rising edge of the clock; pipeline architecture enables synchronous operation and predictable timing.
• Memory Organization  64 Mbit capacity organized as 2M × 32, internally structured as four banks with each bank having 2,048 rows × 256 columns × 32 bits.
• Performance  –6 grade supports a clock frequency of 166 MHz and an access time from clock of 5.5 ns (CAS latency = 3). Other device grades in the family support 200, 166, 143 and 133 MHz options.
• Interface & Control  LVTTL-compatible control interface with programmable burst lengths (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave), and programmable CAS latency (2 or 3 clocks).
• Refresh & Power  Single 3.3V supply operation; supports self-refresh modes and standard refresh cycles (examples in datasheet: 4096 refresh cycles per refresh period depending on grade).
• Operation & Timing  Supports random column address every clock cycle, burst read/write and burst read/single write operations, and burst termination via burst stop and precharge commands.
• Package & Temperature  Supplied in a 90‑TFBGA (8 × 13) package. Commercial operating temperature range documented as 0°C to +70°C (TA).

Typical Applications

• 3.3V system memory  Use as parallel SDRAM in systems that require a 64 Mbit synchronous memory device with LVTTL control and programmable burst behavior.
• Buffered data storage  Suitable where deterministic, clock-referenced burst reads/writes and selectable CAS latency are required for timing-critical buffering.
• Embedded memory subsystems  Integrates into designs needing a compact 90‑TFBGA package and standard SDRAM refresh/self-refresh support.

Unique Advantages

• Quad‑bank organization: Enables internal bank operations to hide row access/precharge and improve effective throughput for burst operations.
• Programmable performance options: Selectable CAS latency (2 or 3) and burst lengths/sequences allow tuning for latency versus throughput needs.
• Standard 3.3V supply: Operates from a single 3.3V power rail (3.0V–3.6V specified), simplifying power design for legacy 3.3V platforms.
• Compact BGA package: 90‑TFBGA (8×13) package supports high-density board implementations while providing the required I/O footprint.
• Synchronous, clocked operation: All inputs/outputs referenced to the positive clock edge for predictable timing and integration with synchronous system buses.

Why Choose IS42S32200E-6B-TR?

The IS42S32200E-6B-TR delivers a deterministic, synchronous 64Mbit DRAM solution with programmable timing and burst flexibility for designs that require a 3.3V parallel memory interface. Its quad-bank architecture, selectable CAS latency, and support for burst read/write modes make it suitable for systems needing predictable memory timing and efficient burst data transfers.

This device is appropriate for designers seeking a compact 90‑TFBGA packaged SDRAM with documented timing parameters (166 MHz clock grade, 5.5 ns access from clock at CL=3) and standard refresh/self-refresh capabilities as specified in the datasheet.

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