IS42S32200E-6BL-TR

The IS42S32200E-6BL-TR is a 64‑Mbit synchronous DRAM device organized as 2M × 32 with four internal banks, designed for high-speed, pipeline-based memory subsystems. It provides a parallel memory interface in a compact 90‑TFBGA (8×13) package and is specified for commercial operation (0°C to +70°C).

Targeted for systems requiring synchronous DRAM buffering and temporary storage, this device offers selectable CAS latency and programmable burst operation to support a range of timing and throughput profiles while operating from a single 3.3 V supply (specified supply range 3.0–3.6 V).

Key Features

• Memory Architecture  64 Mbit density organized as 2,048K × 32 with 4 internal banks for improved concurrency and row/hide operations.
• Synchronous SDRAM Core  Fully synchronous operation with all signals referenced to the rising clock edge; pipeline architecture for high‑speed transfer.
• Performance  Specified for a 166 MHz clock frequency with an access time from clock of 5.5 ns (CAS latency = 3 for the -6 speed grade).
• Programmability  Programmable burst length (1, 2, 4, 8, full page), burst sequence (sequential/interleave), and selectable CAS latency (2 or 3 clocks).
• Refresh and Self‑Refresh  Supports AUTO REFRESH and self‑refresh modes; datasheet specifies 4,096 refresh cycles per refresh window (commercial grade: 64 ms; A2 grade: 16 ms).
• Interface and Signalling  LVTTL-compatible control interface and parallel data I/O for synchronous system integration.
• Power  Single 3.3 V power supply operation with a specified supply range of 3.0 V to 3.6 V.
• Package  90‑ball TF‑BGA (8 × 13) small footprint for space‑constrained board designs.
• Operating Range  Commercial temperature rating: 0°C to +70°C (TA) as specified for this product variant.

Typical Applications

• System Memory Subsystems  Use as high‑speed synchronous DRAM for buffering and temporary storage where a 64‑Mbit parallel memory is required.
• Embedded Platforms  Suitable for embedded designs needing synchronous, pipelined DRAM with programmable burst and CAS timing.
• Data Buffering and Caching  Employed in designs that require predictable burst transfers and selectable latency for intermediate data buffering.

Unique Advantages

• Quad‑bank Organization:  Enables improved memory concurrency and internal bank management to reduce row‑to‑row latencies.
• Selectable Timing Profiles:  Programmable CAS latency and burst configurations allow tuning for system timing and throughput needs.
• Compact BGA Footprint:  90‑TFBGA (8×13) package reduces board area while providing full parallel DRAM connectivity.
• Commercial Temperature Specification:  Rated for 0°C to +70°C, matching standard commercial system deployments.
• Single‑Supply Operation:  Designed for a single 3.3 V supply (3.0–3.6 V range) simplifying power rail requirements.

Why Choose IS42S32200E-6BL-TR?

The IS42S32200E-6BL-TR delivers a compact, synchronous 64‑Mbit DRAM solution with flexible timing and burst options suitable for commercial memory subsystems. Its quad‑bank architecture and programmable modes provide designers with tools to balance latency and throughput for embedded and buffering applications.

This device is appropriate for engineers specifying a 166 MHz SDRAM with a parallel interface and a 90‑TFBGA package where a single 3.3 V supply and commercial temperature rating meet system requirements.

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