IS42S32200E-6BLI-TR

The IS42S32200E-6BLI-TR is a 64 Mbit synchronous DRAM (SDRAM) organized for parallel operation and supplied in a 90-ball TF-BGA package. It implements a quad-bank, fully synchronous architecture with pipelined operation to support high-speed data transfer in 3.3 V memory systems.

This device is suited for designs requiring compact, parallel SDRAM memory with programmable burst and latency options, and is specified for operation from -40°C to +85°C with supply range of 3.0 V to 3.6 V.

Key Features

• Core / Architecture  Quad-bank synchronous DRAM with internal bank management and pipelined access for improved throughput and bank hiding of row access/precharge.
• Memory Organization & Capacity  64 Mbit total capacity with a 2M × 32 organization and parallel memory interface suitable for systems requiring 32-bit wide data paths.
• Performance  Clock frequency option at 166 MHz (part -6), with access time from clock of 5.5 ns and programmable CAS latency (2 or 3 clocks) to match timing requirements.
• Burst & Transfer Control  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential or interleave), plus burst termination by stop or precharge commands for flexible data transfers.
• Power & Interface  Single 3.3 V supply operation (specified supply range 3.0 V–3.6 V) with LVTTL-compatible interface signaling for standard memory system integration.
• Refresh & Self-Refresh  Supports automatic and self-refresh modes; datasheet specifies 4096 refresh cycles per 16 ms (A2 grade) or per 64 ms (commercial/industrial/A1 grade) depending on grade.
• Package & Temperature  90-ball thin fine-pitch BGA (90-TFBGA, 8 × 13) and operating temperature range of -40°C to +85°C (TA).

Typical Applications

• 3.3 V Memory Systems  Provides parallel SDRAM capacity and timing flexibility for designs built around a 3.3 V memory bus.
• High-Speed Buffering  Pipelined, synchronous operation and programmable burst modes serve buffering and burst transfer needs in systems with contiguous data bursts.
• Embedded Systems  Compact TF-BGA package and 64 Mbit capacity support space-constrained embedded designs requiring parallel SDRAM.

Unique Advantages

• Programmable Timing Flexibility:  CAS latency selectable (2 or 3 clocks) and multiple burst length/sequence options allow timing optimization for diverse system requirements.
• Single-Supply Integration:  Operates from a 3.3 V supply (3.0 V–3.6 V range), simplifying power-domain design in standard memory subsystems.
• Banked Architecture for Throughput:  Quad-bank internal organization with bank hiding improves effective bandwidth for row/column access patterns.
• Industrial Temperature Support:  Specified operation from -40°C to +85°C to meet a range of ambient operating conditions.
• Compact BGA Footprint:  90-TFBGA (8 × 13) package minimizes board area while providing a robust ball-grid, soldered connection for production assembly.

Why Choose IS42S32200E-6BLI-TR?

The IS42S32200E-6BLI-TR positions itself as a practical parallel SDRAM option for systems needing 64 Mbit of synchronous memory with configurable latency and burst behavior. Its quad-bank, pipelined architecture and LVTTL interface support designers aiming to balance throughput, timing flexibility, and compact footprint.

This device is appropriate for engineers specifying 3.3 V memory subsystems that require programmable burst performance and industrial-temperature operation, offering a clear path to integration with existing parallel SDRAM designs.

If you would like pricing, availability, or to request a quote for IS42S32200E-6BLI-TR, submit an inquiry or request a quote through your preferred procurement channel.