IS42S32200E-6BL

The IS42S32200E-6BL is a 64‑Mbit synchronous DRAM organized as 2M × 32 with 4 internal banks, designed for parallel memory interfaces. It implements a pipeline, fully synchronous architecture with programmable burst and CAS timing to support high‑speed, predictable data transfer in systems requiring a 64‑Mbit SDRAM.

This device targets applications that require a compact 90‑TFBGA package and standard SDRAM control (LVTTL), offering configurable latency and refresh modes to fit a range of system timing and power requirements.

Key Features

• Core / Memory Organization 64‑Mbit DRAM organized as 2,048K × 32 with 4 internal banks (524,288 bits × 32 × 4 banks) for improved internal concurrency and row management.
• Synchronous SDRAM Performance Fully synchronous operation with all signals referenced to the rising clock edge; clock frequency for the -6 device is 166 MHz and access time is 5.5 ns (CAS‑latency = 3).
• Programmable Burst and CAS Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave); programmable CAS latency options of 2 or 3 clocks for timing flexibility.
• Refresh and Power Modes Supports AUTO REFRESH and SELF‑REFRESH modes; refresh cycles supported include 4096 cycles/16 ms (A2 grade) or 4096 cycles/64 ms (commercial/industrial/A1 options described in the datasheet).
• Supply and I/O Single 3.3 V power supply operation with LVTTL interface signaling; device supply range specified as 3.0 V to 3.6 V.
• Package and Temperature 90‑TFBGA package (8 × 13 ball array) in a compact BGA footprint; specified operating ambient temperature range is 0 °C to +70 °C (TA) for the commercial grade.
• Burst Read/Write Capability Supports burst read/write and burst read/single write operations with burst termination via burst stop and precharge commands for flexible transaction control.

Typical Applications

• Parallel SDRAM memory expansion — Use where a 64‑Mbit parallel SDRAM with configurable latency and burst behavior is required for system memory buffering.
• Synchronous data buffering — Suitable for designs needing pipeline synchronous memory access and predictable clock‑referenced timing.
• Compact board designs — 90‑TFBGA package fits applications constrained by board area while retaining parallel SDRAM connectivity.

Unique Advantages

• Configurable timing options: Programmable CAS latency (2 or 3) and selectable burst lengths provide flexibility to match system timing and throughput needs.
• Quad‑bank architecture: Four internal banks improve effective throughput by allowing overlapping row access and precharge operations.
• Standard 3.3 V operation: Single 3.3 V supply with specified 3.0–3.6 V range simplifies power design for legacy SDRAM systems.
• On‑device refresh support: AUTO REFRESH and SELF‑REFRESH modes plus specified refresh cycle options reduce system refresh management overhead.
• Compact BGA package: 90‑TFBGA (8×13) provides a small footprint implementation for space‑constrained PCBs.

Why Choose IS42S32200E-6BL?

The IS42S32200E-6BL combines a 64‑Mbit SDRAM capacity with a fully synchronous, pipeline architecture and configurable timing to meet the needs of systems requiring predictable parallel memory performance. Its quad‑bank organization, programmable burst modes and CAS latency options let designers tune performance and access patterns to specific application requirements.

Packaged in a 90‑TFBGA and specified for commercial temperature operation, this device is suited to compact designs that require standard LVTTL interfacing and 3.3 V power. It is appropriate for engineers specifying a 64‑Mbit parallel SDRAM with explicit timing and refresh behavior documented in the device datasheet.

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