IS42S32200E-6B

The IS42S32200E-6B is a 64 Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a parallel memory interface. It implements a quad-bank, fully synchronous architecture with pipeline operation to support high-speed, clock-referenced data transfers.

This device is intended for designs that require 64 Mbit of volatile SDRAM storage with programmable burst control, selectable CAS latency, and a compact 90‑TFBGA (8×13) package for board-level memory subsystems operating at a 3.3 V supply range.

Key Features

• Core / Architecture  Quad-bank, fully synchronous SDRAM with all signals referenced to the rising edge of the clock to support predictable timing and pipelined operation.
• Memory Organization  2M × 32 organization providing 64 Mbit of volatile DRAM storage in a parallel interface.
• Performance  Rated for 166 MHz operation (‑6 speed grade) with typical access time of 5.5 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Sequence Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) to match various transfer patterns.
• Refresh and Self-Refresh  Supports auto-refresh and self-refresh modes with documented refresh cycle requirements in the manufacturer datasheet.
• Power  Single-supply operation at 3.0 V to 3.6 V (typical 3.3 V systems).
• Package  90-TFBGA (8×13) ball-grid package for compact board-level integration.
• Temperature Range  Commercial operating temperature range: 0°C to +70°C (TA).

Typical Applications

• System memory subsystems  Provides 64 Mbit of synchronous parallel DRAM capacity for board-level memory implementations where a 2M × 32 organization is required.
• High-speed buffering  Programmable burst lengths and selectable CAS latency enable adaptable buffering and burst transfer patterns for short-term data storage and transfer.
• Embedded SDRAM usage  Compact 90‑TFBGA package and single 3.3 V supply fit embedded designs that need a stable, clocked DRAM component with documented timing parameters.

Unique Advantages

• Fully synchronous, clock-referenced interface: All inputs and outputs are referenced to the positive clock edge for deterministic timing and pipeline operation.
• Flexible burst control: Programmable burst length and burst sequence let you optimize transfers for sequential or interleaved access patterns.
• Selectable CAS latency: CAS latency options (2 or 3 clocks) and a 5.5 ns access time (‑6 grade) support low-latency data access configurations.
• Single 3.3 V supply: Simplifies power design by operating across a 3.0 V to 3.6 V range.
• Compact BGA footprint: 90‑TFBGA (8×13) package reduces board area for space-constrained applications while maintaining required I/O density.
• Documented refresh and timing details: Manufacturer datasheet provides timing tables, refresh requirements and operational options for reliable system integration.

Why Choose IS42S32200E-6B?

The IS42S32200E-6B offers a documented, clocked SDRAM solution delivering 64 Mbit of volatile storage with a 2M × 32 organization, programmable burst modes, and selectable CAS latency. Its 166 MHz speed grade (‑6) and 5.5 ns access time provide predictable, low-latency operation for designs that require synchronous pipeline transfers.

This device is suitable for designers needing a compact, board-level parallel SDRAM in a 90‑TFBGA package with single-supply 3.3 V operation and commercial temperature rating. Technical details and timing parameters are provided in the manufacturer’s specification to aid integration and verification in target systems.

If you need pricing, lead-time, or to request a quote for IS42S32200E-6B, please submit a request for a quote specifying quantity and delivery requirements.